Fabrication and Performances of Recessed Gate AlGaN/GaN MOSFETs with Si₃N₄/TiO₂ Stacked Dual Gate Dielectric

• Published in: Journal of semiconductor technology and science Vol. 22; no. 2; pp. 105 - 114
• Main Authors: An, Hee-Dae, Bae, Jin-Hyuk, Lee, Sin-Hyung, Kang, In-Man, Min, So-Ra, Lee, Sang-Ho, Park, Jin, Kim, Geon-Uk, Yoon, Young-Jun, Seo, Jae-Hwa, Cho, Min-Su, Jang, Jaewon
• Format: Journal Article
• Language: English
• Published: 대한전자공학회 01.04.2022
• Subjects: 전기공학; GaN; normally-off; dual gate dielectric; silicon nitride (Si₃N₄); recessed gate technique; titanium dioxide (TiO₂); AlGaN

In this paper, a recessed gate AlGaN/GaN metal-oxide-semiconductor field-effect-transistor (M-OSFET) with Si3N4/TiO2 stacked dual gate dielectric was proposed and fabricated to improve the current drivability. Normally-off operation with a Vth of 1.81 V was obtained using a Cl2-based gate recess etc...