APA (7th ed.) Citation

An, H., Bae, J., Lee, S., Kang, I., Min, S., Lee, S., . . . Jang, J. (2022). Fabrication and Performances of Recessed Gate AlGaN/GaN MOSFETs with Si₃N₄/TiO₂ Stacked Dual Gate Dielectric. Journal of semiconductor technology and science, 22(2), 105-114. https://doi.org/10.5573/JSTS.2022.22.2.105

Chicago Style (17th ed.) Citation

An, Hee-Dae, et al. "Fabrication and Performances of Recessed Gate AlGaN/GaN MOSFETs with Si₃N₄/TiO₂ Stacked Dual Gate Dielectric." Journal of Semiconductor Technology and Science 22, no. 2 (2022): 105-114. https://doi.org/10.5573/JSTS.2022.22.2.105.

MLA (9th ed.) Citation

An, Hee-Dae, et al. "Fabrication and Performances of Recessed Gate AlGaN/GaN MOSFETs with Si₃N₄/TiO₂ Stacked Dual Gate Dielectric." Journal of Semiconductor Technology and Science, vol. 22, no. 2, 2022, pp. 105-114, https://doi.org/10.5573/JSTS.2022.22.2.105.