Deep-UVsensors based on SAW oscillators using low-temperature-grown AlN films on sapphires
High-quality epitaxial AlN films were deposited on sapphire substrates at low growth temperature using a helicon sputtering system. SAW filters fabricated on the AlN films exhibited excellent characteristics, with center frequency of 354.2 MHz, which corresponds to a phase velocity of 5667 m/s. An o...
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| Published in | IEEE transactions on ultrasonics, ferroelectrics, and frequency control Vol. 58; no. 8; pp. 1688 - 1693 |
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| Main Authors | , , , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
New York
IEEE
01.08.2011
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subjects | |
| Online Access | Get full text |
| ISSN | 0885-3010 1525-8955 |
| DOI | 10.1109/TUFFC.2011.1997 |
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| Abstract | High-quality epitaxial AlN films were deposited on sapphire substrates at low growth temperature using a helicon sputtering system. SAW filters fabricated on the AlN films exhibited excellent characteristics, with center frequency of 354.2 MHz, which corresponds to a phase velocity of 5667 m/s. An oscillator fabricated using AlN-based SAW devices is presented and applied to deep-UV light detection. A frequency downshift of about 43 KHz was observed when the surface of SAW device was illuminated by a UV source with dominant wavelength of around 200 nm. The results indicate the feasibility of developing remote sensors for deep-UV measurement using AlN-based SAW oscillators. |
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| AbstractList | High-quality epitaxial AlN films were deposited on sapphire substrates at low growth temperature using a helicon sputtering system. SAW filters fabricated on the AlN films exhibited excellent characteristics, with center frequency of 354.2 MHz, which corresponds to a phase velocity of 5667 m/s. An oscillator fabricated using AlN-based SAW devices is presented and applied to deep-UV light detection. A frequency downshift of about 43 KHz was observed when the surface of SAW device was illuminated by a UV source with dominant wavelength of around 200 nm. The results indicate the feasibility of developing remote sensors for deep-UV measurement using AlN-based SAW oscillators. |
| Author | Jian, Sheng-rui Tzou, An-jyeg Chen, Meei-ru Kao, Hui-ling Chen, Jyh Shin Chen, Hou-guang Jeng, Erik S. Liang, Yen Laksana, Chipta P. |
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| SubjectTerms | Acoustic waves Aluminum nitride Deposition Devices Epitaxial growth Oscillators Remote sensors Sapphire Sputtering Substrates Surface acoustic wave devices Wavelengths |
| Title | Deep-UVsensors based on SAW oscillators using low-temperature-grown AlN films on sapphires |
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