Deep-UVsensors based on SAW oscillators using low-temperature-grown AlN films on sapphires

High-quality epitaxial AlN films were deposited on sapphire substrates at low growth temperature using a helicon sputtering system. SAW filters fabricated on the AlN films exhibited excellent characteristics, with center frequency of 354.2 MHz, which corresponds to a phase velocity of 5667 m/s. An o...

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Published inIEEE transactions on ultrasonics, ferroelectrics, and frequency control Vol. 58; no. 8; pp. 1688 - 1693
Main Authors Laksana, Chipta P., Chen, Meei-ru, Liang, Yen, Tzou, An-jyeg, Kao, Hui-ling, Jeng, Erik S., Chen, Jyh Shin, Chen, Hou-guang, Jian, Sheng-rui
Format Journal Article
LanguageEnglish
Published New York IEEE 01.08.2011
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Acoustic waves
Aluminum nitride
Deposition
Devices
Epitaxial growth
Oscillators
Remote sensors
Sapphire
Sputtering
Substrates
Surface acoustic wave devices
Wavelengths
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ISSN0885-3010
1525-8955
DOI10.1109/TUFFC.2011.1997

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Summary:High-quality epitaxial AlN films were deposited on sapphire substrates at low growth temperature using a helicon sputtering system. SAW filters fabricated on the AlN films exhibited excellent characteristics, with center frequency of 354.2 MHz, which corresponds to a phase velocity of 5667 m/s. An oscillator fabricated using AlN-based SAW devices is presented and applied to deep-UV light detection. A frequency downshift of about 43 KHz was observed when the surface of SAW device was illuminated by a UV source with dominant wavelength of around 200 nm. The results indicate the feasibility of developing remote sensors for deep-UV measurement using AlN-based SAW oscillators.
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ISSN:0885-3010
1525-8955
DOI:10.1109/TUFFC.2011.1997