Structural and luminescence properties of CaxBa1−xGa2S4:Eu2+ chalcogenide semiconductor solid solutions
The structural and luminescence properties of chalcogenide semiconductor CaxBa1−xGa2S4 solid solutions (x=0.1–0.9) doped with 7at% of Eu2+ ions were studied at room temperature. It was found, that the crystal structure of CaxBa1−xGa2S4 solid solutions varies with the amount of Ca2+ cations and phase...
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| Published in | Physica. B, Condensed matter Vol. 478; pp. 58 - 62 |
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| Language | English |
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Elsevier B.V
01.12.2015
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| Abstract | The structural and luminescence properties of chalcogenide semiconductor CaxBa1−xGa2S4 solid solutions (x=0.1–0.9) doped with 7at% of Eu2+ ions were studied at room temperature. It was found, that the crystal structure of CaxBa1−xGa2S4 solid solutions varies with the amount of Ca2+ cations and phase transition from cubic to orthorhombic takes place with increase of x value. CaxBa1−xGa2S4:Eu2+ solid solutions exhibit intense photoluminescence in cyan to yellow spectral region depending on x due to 5d→4f electron–dipole transitions in Eu2+ ions. The peak position of the emission band shifts from 506nm for x=0.1 to 555nm for x=0.9 and the full width at half maximum of the emission band varies from 62nm to 72nm depending on the symmetry of the crystal lattice. The PL excitation spectrum of CaxBa1−xGa2S4:Eu2+ covers the range at half maximum from 310nm to 480nm for x=0.1 and to 520nm for x=0.9. It was shown that long-wavelength shift is caused by influence of the growing crystal field strength on Eu2+ ions. |
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| AbstractList | The structural and luminescence properties of chalcogenide semiconductor CaxBa1−xGa2S4 solid solutions (x=0.1–0.9) doped with 7at% of Eu2+ ions were studied at room temperature. It was found, that the crystal structure of CaxBa1−xGa2S4 solid solutions varies with the amount of Ca2+ cations and phase transition from cubic to orthorhombic takes place with increase of x value. CaxBa1−xGa2S4:Eu2+ solid solutions exhibit intense photoluminescence in cyan to yellow spectral region depending on x due to 5d→4f electron–dipole transitions in Eu2+ ions. The peak position of the emission band shifts from 506nm for x=0.1 to 555nm for x=0.9 and the full width at half maximum of the emission band varies from 62nm to 72nm depending on the symmetry of the crystal lattice. The PL excitation spectrum of CaxBa1−xGa2S4:Eu2+ covers the range at half maximum from 310nm to 480nm for x=0.1 and to 520nm for x=0.9. It was shown that long-wavelength shift is caused by influence of the growing crystal field strength on Eu2+ ions. |
| Author | Jabarov, S.H. Mammadov, A.I. Tagiyev, B.G. Quang, Vu Xuan Leonenya, M.S. Tagiyev, O.B. Dang, N.T. Naghiyev, T.G. Yablonskii, G.P. |
| Author_xml | – sequence: 1 givenname: B.G. surname: Tagiyev fullname: Tagiyev, B.G. organization: Institute of Physics of Azerbaijan National Academy of Sciences, 131 H.Javid ave., Baku Az-1143, Azerbaijan – sequence: 2 givenname: O.B. surname: Tagiyev fullname: Tagiyev, O.B. organization: Institute of Physics of Azerbaijan National Academy of Sciences, 131 H.Javid ave., Baku Az-1143, Azerbaijan – sequence: 3 givenname: A.I. surname: Mammadov fullname: Mammadov, A.I. organization: Institute of Physics of Azerbaijan National Academy of Sciences, 131 H.Javid ave., Baku Az-1143, Azerbaijan – sequence: 4 givenname: Vu Xuan surname: Quang fullname: Quang, Vu Xuan organization: Institute of Research and Development, Duy Tan University, 550000 Da Nang, Vietnam – sequence: 5 givenname: T.G. surname: Naghiyev fullname: Naghiyev, T.G. email: tural@nagiyev.net organization: Institute of Physics of Azerbaijan National Academy of Sciences, 131 H.Javid ave., Baku Az-1143, Azerbaijan – sequence: 6 givenname: S.H. surname: Jabarov fullname: Jabarov, S.H. organization: Institute of Physics of Azerbaijan National Academy of Sciences, 131 H.Javid ave., Baku Az-1143, Azerbaijan – sequence: 7 givenname: M.S. surname: Leonenya fullname: Leonenya, M.S. organization: Institute of Physics of National Academy Sciences of Belarus, 220072 Minsk, Belarus – sequence: 8 givenname: G.P. surname: Yablonskii fullname: Yablonskii, G.P. organization: Institute of Physics of National Academy Sciences of Belarus, 220072 Minsk, Belarus – sequence: 9 givenname: N.T. surname: Dang fullname: Dang, N.T. organization: Institute of Research and Development, Duy Tan University, 550000 Da Nang, Vietnam |
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