Effect of SiC, TaB2 and TaSi2 additives on the isothermal oxidation resistance of fully dense zirconium diboride

• Published in: Journal of materials research Vol. 24; no. 5; pp. 1855 - 1867
• Main Authors: Peng, Fei, Berta, Yolande, Speyer, Robert F.
• Format: Journal Article
• Language: English
• Published: New York, USA Cambridge University Press 01.05.2009; Springer International Publishing
• Subjects: Applied and Technical Physics; Biomaterials; Inorganic Chemistry; Materials Engineering; Materials Science; Nanotechnology; Oxidation; Passivation; Zr; Oxidation; Passivation

The oxidation resistances of ZrB2 containing SiC, TaB2, and TaSi2 additions of various concentrations were studied using isothermal thermogravimetry at 1200, 1400, and 1500 °C, and specimens were further characterized using x-ray diffraction and electron microscopy. Increasing SiC concentration resu...