Determination of the electron trap level in Fe-doped GaN by phonon-assisted conduction phenomenon

Abstract We acoustically measured the energy level for thermally activated conduction (TAC) in high-resistivity Fe-doped GaN using the non-contacting antenna-transmission acoustic-resonance method. The acoustic attenuation takes a maximum at a specific temperature, where the TAC is accelerated with...

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Published inApplied physics express Vol. 15; no. 7; pp. 71003 - 71007
Main Authors Fukuda, Hiroki, Nagakubo, Akira, Usami, Shigeyoshi, Ikeda, Masashi, Imanishi, Masayuki, Yoshimura, Masashi, Mori, Yusuke, Adachi, Kanta, Ogi, Hirotsugu
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.07.2022
Subjects
Acoustic method
elastic constants
electron trap level
GaN
internal friction
non-contacting measurement
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Abstract Abstract We acoustically measured the energy level for thermally activated conduction (TAC) in high-resistivity Fe-doped GaN using the non-contacting antenna-transmission acoustic-resonance method. The acoustic attenuation takes a maximum at a specific temperature, where the TAC is accelerated with the help of phonon energy. The Debye-type relaxation is thus observed for acoustic attenuation, and its activation energy (0.54 ± 0.04 eV) was determined with attenuation measurements at various frequencies and temperatures. This value agrees with the E3 level in GaN, indicating that thermally associated conduction originates from the E3 trap level. We also measured the five independent elastic constants at high temperatures.
AbstractList Abstract We acoustically measured the energy level for thermally activated conduction (TAC) in high-resistivity Fe-doped GaN using the non-contacting antenna-transmission acoustic-resonance method. The acoustic attenuation takes a maximum at a specific temperature, where the TAC is accelerated with the help of phonon energy. The Debye-type relaxation is thus observed for acoustic attenuation, and its activation energy (0.54 ± 0.04 eV) was determined with attenuation measurements at various frequencies and temperatures. This value agrees with the E3 level in GaN, indicating that thermally associated conduction originates from the E3 trap level. We also measured the five independent elastic constants at high temperatures.
Author Usami, Shigeyoshi
Fukuda, Hiroki
Adachi, Kanta
Ogi, Hirotsugu
Mori, Yusuke
Imanishi, Masayuki
Nagakubo, Akira
Ikeda, Masashi
Yoshimura, Masashi
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  surname: Ogi
  fullname: Ogi, Hirotsugu
  organization: Osaka University Graduate School of Engineering, Suita, Osaka 565-0871, Japan
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Cites_doi 10.1063/1.1418452
10.1007/BF00212204
10.1063/1.4907675
10.1143/JJAP.45.18
10.1109/16.906451
10.1103/PhysRevB.2.3952
10.1143/JJAP.45.L358
10.1063/1.1735657
10.1063/1.4966995
10.1063/1.1728525
10.1149/1.2749094
10.1080/00018736100101271
10.35848/1882-0786/ab9e7c
10.1080/14786435.2013.837225
10.1063/1.1831568
10.1063/1.4964831
10.1063/1.4806980
10.1016/0038-1098(70)90365-0
10.1063/1.1290491
10.1109/TED.2013.2268160
10.1103/PhysRev.135.A482
10.1063/1.4955046
10.1088/1361-6641/ac16c3
10.1109/TED.2014.2364855
10.1143/JJAP.33.6443
10.1109/ACCESS.2018.2885285
10.1109/55.784448
10.1063/1.4913973
10.1109/TED.2003.816549
10.1103/PhysRev.119.1238
10.1063/1.2335684
10.1063/1.363128
10.1063/1.1621458
10.1063/1.4731657
10.1109/16.906458
10.1103/PhysRev.107.972
10.1088/0268-1242/31/3/035024
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References Hutson (apexac749cbib17) 1962; 33
Yang (apexac749cbib5) 2021; 36
Klein (apexac749cbib7) 2001; 79
Fisher (apexac749cbib35) 1964; 135
Egawa (apexac749cbib11) 2001; 48
Adachi (apexac749cbib31) 2016; 119
Daumiller (apexac749cbib10) 1999; 20
Ogi (apexac749cbib14) 2015; 106
Hache (apexac749cbib21) 1994; 33
Adachi (apexac749cbib27) 2016; 109
Horita (apexac749cbib26) 2020; 13
Wickramaratne (apexac749cbib24) 2016; 109
Polyakov (apexac749cbib23) 2003; 83
Vetury (apexac749cbib4) 2001; 48
Hassan (apexac749cbib2) 2018; 6
Shimada (apexac749cbib28) 2006; 45
Manchon (apexac749cbib29) 1970; 8
Chen (apexac749cbib13) 2006; 45
Puzyrev (apexac749cbib25) 2015; 106
Kirchner (apexac749cbib30) 2000; 77
Slutsky (apexac749cbib36) 1957; 107
Ohno (apexac749cbib32) 1990; 17
Smith (apexac749cbib37) 1960; 31
Varshni (apexac749cbib34) 1970; 2
Shinohara (apexac749cbib1) 2013; 60
Cardwell (apexac749cbib8) 2013; 102
Ogi (apexac749cbib33) 2006; 100
Tarumi (apexac749cbib38) 2013; 93
Look (apexac749cbib9) 1996; 80
Polyakov (apexac749cbib15) 2007; 154
Nakamura (apexac749cbib16) 2012; 83
Meneghini (apexac749cbib6) 2014; 61
Adachi (apexac749cbib18) 2016; 109
Mizutani (apexac749cbib3) 2003; 50
Mott (apexac749cbib19) 1961; 10
Yalamarthy (apexac749cbib12) 2016; 31
Fritzsche (apexac749cbib20) 1960; 119
Kordoš (apexac749cbib22) 2004; 85
References_xml – volume: 79
  start-page: 3527
  year: 2001
  ident: apexac749cbib7
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.1418452
  contributor:
    fullname: Klein
– volume: 17
  start-page: 371
  year: 1990
  ident: apexac749cbib32
  publication-title: Phys. Chem. Miner.
  doi: 10.1007/BF00212204
  contributor:
    fullname: Ohno
– volume: 106
  year: 2015
  ident: apexac749cbib25
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.4907675
  contributor:
    fullname: Puzyrev
– volume: 45
  start-page: 18
  year: 2006
  ident: apexac749cbib13
  publication-title: Jpn. J. Appl. Phys.
  doi: 10.1143/JJAP.45.18
  contributor:
    fullname: Chen
– volume: 48
  start-page: 560
  year: 2001
  ident: apexac749cbib4
  publication-title: IEEE Trans. Electron Devices
  doi: 10.1109/16.906451
  contributor:
    fullname: Vetury
– volume: 2
  start-page: 3952
  year: 1970
  ident: apexac749cbib34
  publication-title: Phys. Rev. B
  doi: 10.1103/PhysRevB.2.3952
  contributor:
    fullname: Varshni
– volume: 45
  start-page: L358
  year: 2006
  ident: apexac749cbib28
  publication-title: Jpn. J. Appl. Phys.
  doi: 10.1143/JJAP.45.L358
  contributor:
    fullname: Shimada
– volume: 31
  start-page: 645
  year: 1960
  ident: apexac749cbib37
  publication-title: J. Appl. Phys.
  doi: 10.1063/1.1735657
  contributor:
    fullname: Smith
– volume: 109
  year: 2016
  ident: apexac749cbib18
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.4966995
  contributor:
    fullname: Adachi
– volume: 33
  start-page: 40
  year: 1962
  ident: apexac749cbib17
  publication-title: J. Appl. Phys.
  doi: 10.1063/1.1728525
  contributor:
    fullname: Hutson
– volume: 154
  start-page: H749
  year: 2007
  ident: apexac749cbib15
  publication-title: J. Electrochem. Soc.
  doi: 10.1149/1.2749094
  contributor:
    fullname: Polyakov
– volume: 10
  start-page: 107
  year: 1961
  ident: apexac749cbib19
  publication-title: Adv. Phys.
  doi: 10.1080/00018736100101271
  contributor:
    fullname: Mott
– volume: 13
  year: 2020
  ident: apexac749cbib26
  publication-title: Appl. Phys. Express
  doi: 10.35848/1882-0786/ab9e7c
  contributor:
    fullname: Horita
– volume: 93
  start-page: 4532
  year: 2013
  ident: apexac749cbib38
  publication-title: Philos. Mag.
  doi: 10.1080/14786435.2013.837225
  contributor:
    fullname: Tarumi
– volume: 85
  start-page: 5616
  year: 2004
  ident: apexac749cbib22
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.1831568
  contributor:
    fullname: Kordoš
– volume: 109
  year: 2016
  ident: apexac749cbib24
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.4964831
  contributor:
    fullname: Wickramaratne
– volume: 102
  year: 2013
  ident: apexac749cbib8
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.4806980
  contributor:
    fullname: Cardwell
– volume: 8
  start-page: 1227
  year: 1970
  ident: apexac749cbib29
  publication-title: Solid State Commun.
  doi: 10.1016/0038-1098(70)90365-0
  contributor:
    fullname: Manchon
– volume: 77
  start-page: 1434
  year: 2000
  ident: apexac749cbib30
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.1290491
  contributor:
    fullname: Kirchner
– volume: 60
  start-page: 2982
  year: 2013
  ident: apexac749cbib1
  publication-title: IEEE Trans. Electron Devices
  doi: 10.1109/TED.2013.2268160
  contributor:
    fullname: Shinohara
– volume: 109
  year: 2016
  ident: apexac749cbib27
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.4966995
  contributor:
    fullname: Adachi
– volume: 135
  start-page: A482
  year: 1964
  ident: apexac749cbib35
  publication-title: Phys. Rev.
  doi: 10.1103/PhysRev.135.A482
  contributor:
    fullname: Fisher
– volume: 119
  year: 2016
  ident: apexac749cbib31
  publication-title: J. Appl. Phys.
  doi: 10.1063/1.4955046
  contributor:
    fullname: Adachi
– volume: 36
  year: 2021
  ident: apexac749cbib5
  publication-title: Semicond. Sci. Technol.
  doi: 10.1088/1361-6641/ac16c3
  contributor:
    fullname: Yang
– volume: 61
  start-page: 4070
  year: 2014
  ident: apexac749cbib6
  publication-title: IEEE Trans. Electron Devices
  doi: 10.1109/TED.2014.2364855
  contributor:
    fullname: Meneghini
– volume: 33
  start-page: 6443
  year: 1994
  ident: apexac749cbib21
  publication-title: Jpn. J. Appl. Phys.
  doi: 10.1143/JJAP.33.6443
  contributor:
    fullname: Hache
– volume: 6
  start-page: 78790
  year: 2018
  ident: apexac749cbib2
  publication-title: IEEE Access
  doi: 10.1109/ACCESS.2018.2885285
  contributor:
    fullname: Hassan
– volume: 20
  start-page: 448
  year: 1999
  ident: apexac749cbib10
  publication-title: IEEE Electron Device Lett.
  doi: 10.1109/55.784448
  contributor:
    fullname: Daumiller
– volume: 106
  year: 2015
  ident: apexac749cbib14
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.4913973
  contributor:
    fullname: Ogi
– volume: 50
  start-page: 2015
  year: 2003
  ident: apexac749cbib3
  publication-title: IEEE Trans. Electron Devices
  doi: 10.1109/TED.2003.816549
  contributor:
    fullname: Mizutani
– volume: 119
  start-page: 1238
  year: 1960
  ident: apexac749cbib20
  publication-title: Phys. Rev.
  doi: 10.1103/PhysRev.119.1238
  contributor:
    fullname: Fritzsche
– volume: 100
  year: 2006
  ident: apexac749cbib33
  publication-title: J. Appl. Phys.
  doi: 10.1063/1.2335684
  contributor:
    fullname: Ogi
– volume: 80
  start-page: 2960
  year: 1996
  ident: apexac749cbib9
  publication-title: J. Appl. Phys.
  doi: 10.1063/1.363128
  contributor:
    fullname: Look
– volume: 83
  start-page: 3314
  year: 2003
  ident: apexac749cbib23
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.1621458
  contributor:
    fullname: Polyakov
– volume: 83
  year: 2012
  ident: apexac749cbib16
  publication-title: Rev. Sci. Instrum.
  doi: 10.1063/1.4731657
  contributor:
    fullname: Nakamura
– volume: 48
  start-page: 603
  year: 2001
  ident: apexac749cbib11
  publication-title: IEEE Trans. Electron Devices
  doi: 10.1109/16.906458
  contributor:
    fullname: Egawa
– volume: 107
  start-page: 972
  year: 1957
  ident: apexac749cbib36
  publication-title: Phys. Rev.
  doi: 10.1103/PhysRev.107.972
  contributor:
    fullname: Slutsky
– volume: 31
  year: 2016
  ident: apexac749cbib12
  publication-title: Semicond. Sci. Technol.
  doi: 10.1088/0268-1242/31/3/035024
  contributor:
    fullname: Yalamarthy
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Snippet Abstract We acoustically measured the energy level for thermally activated conduction (TAC) in high-resistivity Fe-doped GaN using the non-contacting...
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iop
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StartPage 71003
SubjectTerms Acoustic method
elastic constants
electron trap level
GaN
internal friction
non-contacting measurement
Title Determination of the electron trap level in Fe-doped GaN by phonon-assisted conduction phenomenon
URI https://iopscience.iop.org/article/10.35848/1882-0786/ac749c
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