Incorporation of Ba2+ ions on the properties of MoO3 thin films and fabrication of positive photo-response Cu/Ba–MoO3/p-Si structured diodes

• Published in: Superlattices and microstructures Vol. 133; p. 106197
• Main Authors: Vivek, P., Chandrasekaran, J., Marnadu, R., Maruthamuthu, S., Balasubramani, V.
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.09.2019
• Subjects: Phase transformation; Plate-like structure and interfacial layer of Ba–MoO3; Schottky barrier diode; Schottky barrier diode; Phase transformation; Plate-like structure and interfacial layer of Ba–MoO3

Metal-insulator-semiconductor (MIS) structured Schottky barrier diodes (SBDs) are the most significant device in optoelectronic device application. Here, we demonstrated a highly rectifying SBDs using a thin interfacial layer among p-type silicon (p-Si) and metal (Cu) junction. These composite films...