Improvement of oxide chemical mechanical polishing performance by increasing Ce3+/Ce4+ ratio in ceria slurry via hydrogen reduction

• Published in: Materials science in semiconductor processing Vol. 159; p. 107349
• Main Authors: Lee, Jaewon, Kim, Eungchul, Bae, Chulwoo, Seok, Hyunho, Cho, Jinil, Aydin, Kubra, Kim, Taesung
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.06.2023
• Subjects: Ceria abrasive; Chemical mechanical polishing (CMP); Hydrogen gas; Reduction; Chemical mechanical polishing (CMP); Reduction; Ceria abrasive; Hydrogen gas

Ceria-based abrasive is widely used in the oxide chemical mechanical polishing (CMP) process due to its high polishing performance. Ce3+ ions on the surface of ceria form a Ce–O–Si chemical bond with surface of the SiO2 wafer, significantly affecting the material removal rate (MRR). In this study, t...