Fabrication and photoelectric properties of n-V2O5/p-GaAs heterojunction

• Published in: Materials science in semiconductor processing Vol. 152; p. 107069
• Main Authors: Mei, Jincheng, Li, Yi, Yan, Junyi, Zhuang, Jiaqing, Wang, Xingping, Zhang, Xin, Wu, Yuda, Zou, Mengdi, Peng, Chuang, Dai, Wenyan, Yuan, Zhen, Lin, Ke
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.12.2022
• Subjects: Heterojunction; Rectification; Transmittance; Vanadium pentoxide; Rectification; Vanadium pentoxide; Transmittance; Heterojunction
• DOI: 10.1016/j.mssp.2022.107069
• ISSN: 1369-8001

The n-V2O5/p-GaAs heterojunction was fabricated experimentally and investigated to reveal its optoelectronic and structural properties. Experiments show that the device performance is closely related to the annealing temperature and annealing time during the film preparation, which could profoundly affect the rectification characteristics. To better manifest our perspective, the volt-ampere characteristic curves of the junction were thoroughly investigated under different temperature and illumination conditions. The responsivity of n-V2O5/p-GaAs heterojunction was 0.00517 A/W at 1550 nm, and the detectivity were 1.15 × 107 Jones and 4.75 × 108 Jones at 0 and 3 V bias. These values were nearly 2-fold higher than those at 1310 nm, whose responsivity was 0.00264 A/W and detectivity remained 5.85 × 106 and 2.61 × 108 Jones at 0 and 3 V bias, respectively. The results are conducive to the exploration and improvement of near-infrared optoelectronic devices based on V2O5. •Optimal process conditions for preparing n-V2O5/p-GaAs heterojunction were determined by the test of multifilm transmittance.•Optoelectronic tests at different temperatures revealed that the device had excellent rectification characteristics.•The optical responsivity and detectivity at 0 V under 1550 nm light illumination reached 0.0052 A/W and 1.15 × 107 Jones.