Observation of a Current Plateau in the Transfer Characteristics of InGaN/AlGaN/AlN/GaN Heterojunction Field Effect Transistors

• Published in: Chinese physics letters Vol. 32; no. 12; pp. 113 - 116
• Main Author: 闫俊达 王权 王晓亮 肖红领 姜丽娟 殷海波 冯春 王翠梅 渠慎奇 巩稼民 张博 李百泉 王占国 侯洵
• Format: Journal Article
• Language: English
• Published: 01.12.2015
• Subjects: 2DEG; AlGaN; HFET; InGaN; 二维空穴气; 异质结场效应晶体管; 特性; 高原

Direct-current transfer characteristics of （InGaN）/A1GaN/A1N/GaN heterojunction field effect transistors （HFETs） are presented. A drain current plateau （IDs = 32.0 mA/mm） for Vcs swept from ＋0.7 V to -0. 6 V is present in the transfer characteristics of InGaN/AIGaN/AIN/GaN HFETs. The theoretical cal...