Observation of a Current Plateau in the Transfer Characteristics of InGaN/AlGaN/AlN/GaN Heterojunction Field Effect Transistors

Direct-current transfer characteristics of （InGaN）/A1GaN/A1N/GaN heterojunction field effect transistors （HFETs） are presented. A drain current plateau （IDs = 32.0 mA/mm） for Vcs swept from ＋0.7 V to -0. 6 V is present in the transfer characteristics of InGaN/AIGaN/AIN/GaN HFETs. The theoretical cal...

Full description

Saved in:
Bibliographic Details
Published inChinese physics letters Vol. 32; no. 12; pp. 113 - 116
Main Author 闫俊达 王权 王晓亮 肖红领 姜丽娟 殷海波 冯春 王翠梅 渠慎奇 巩稼民 张博 李百泉 王占国 侯洵
Format Journal Article
LanguageEnglish
Published 01.12.2015
Subjects
2DEG
AlGaN
HFET
InGaN
二维空穴气
异质结场效应晶体管
特性
高原
Online AccessGet full text

Cover

More Information
Summary:Direct-current transfer characteristics of （InGaN）/A1GaN/A1N/GaN heterojunction field effect transistors （HFETs） are presented. A drain current plateau （IDs = 32.0 mA/mm） for Vcs swept from ＋0.7 V to -0. 6 V is present in the transfer characteristics of InGaN/AIGaN/AIN/GaN HFETs. The theoretical calculation shows the coexistence of two-dimensional electron gas （2DEG） and two-dimensional hole gas （2DHG） in InGaN/AIGaN/A1N/GaN heterostructures, and the screening effect of 2DHG to the 2DEG in the conduction channel can explain this current plateau. Moreover, the current plateau shows the time-dependent behavior when IDs Vcs scans repeated are conducted. The obtained insight provides indication for the design in the fabrication of GaN-based super HFETs.
Bibliography:11-1959/O4
Direct-current transfer characteristics of （InGaN）/A1GaN/A1N/GaN heterojunction field effect transistors （HFETs） are presented. A drain current plateau （IDs = 32.0 mA/mm） for Vcs swept from ＋0.7 V to -0. 6 V is present in the transfer characteristics of InGaN/AIGaN/AIN/GaN HFETs. The theoretical calculation shows the coexistence of two-dimensional electron gas （2DEG） and two-dimensional hole gas （2DHG） in InGaN/AIGaN/A1N/GaN heterostructures, and the screening effect of 2DHG to the 2DEG in the conduction channel can explain this current plateau. Moreover, the current plateau shows the time-dependent behavior when IDs Vcs scans repeated are conducted. The obtained insight provides indication for the design in the fabrication of GaN-based super HFETs.
YAN Jun-Da, WANG Quan, WANG Xiao-Liang, XIAO Hong-Ling, JIANG Li-Juan, YIN Hai-Bo, FENG Chun, WANG Cui-Mei, QU Shen-Qi, GONG Jia-Min, ZHANG Bo, LI Bai-Quan,WANG Zhan-Guo, HOU Xun（1. Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083; 2.School of Electronic Engineering, Xi＇an University of Posts and Telecommunications, Xi＇an 710049 ;3 Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083 ;4.ISCAS-XJTU Joint Laboratory of Functional Materials and Devices for Informatics, Beijing 100083 ; 5.Beijing Huajin Uhuangwei Technology Co., Ltd., Beijing 100036）
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/32/12/127301