侯洵, 闫. 王. 王. 肖. 姜. 殷. 冯. 王. 渠. 巩. 张. 李. 王. (2015). Observation of a Current Plateau in the Transfer Characteristics of InGaN/AlGaN/AlN/GaN Heterojunction Field Effect Transistors. Chinese physics letters, 32(12), 113-116. https://doi.org/10.1088/0256-307X/32/12/127301
Chicago Style (17th ed.) Citation侯洵, 闫俊达 王权 王晓亮 肖红领 姜丽娟 殷海波 冯春 王翠梅 渠慎奇 巩稼民 张博 李百泉 王占国. "Observation of a Current Plateau in the Transfer Characteristics of InGaN/AlGaN/AlN/GaN Heterojunction Field Effect Transistors." Chinese Physics Letters 32, no. 12 (2015): 113-116. https://doi.org/10.1088/0256-307X/32/12/127301.
MLA (9th ed.) Citation侯洵, 闫俊达 王权 王晓亮 肖红领 姜丽娟 殷海波 冯春 王翠梅 渠慎奇 巩稼民 张博 李百泉 王占国. "Observation of a Current Plateau in the Transfer Characteristics of InGaN/AlGaN/AlN/GaN Heterojunction Field Effect Transistors." Chinese Physics Letters, vol. 32, no. 12, 2015, pp. 113-116, https://doi.org/10.1088/0256-307X/32/12/127301.