Novel Precursors for the MOCVD of Molybdenum Nitride

• Published in: ECS transactions Vol. 25; no. 8; pp. 593 - 600
• Main Authors: Thiede, Tobias, Gwildies, Vanessa, Alsamann, Louay, Rische, Daniel, Fischer, Roland
• Format: Journal Article
• Language: English
• Published: 01.01.2009

Tungsten nitride and molybdenum nitride are electrically conducting refractory metal nitrides. Their applicability as novel gate electrode materials in CMOS technology is actually under investigation. MOCVD is one of the most prominent processes to deposit thin films of these materials. In order to...