Sol-gel prepared β-Ga2O3 thin films for ultraviolet photodetectors

• Published in: Applied physics letters Vol. 90; no. 3
• Main Authors: Kokubun, Yoshihiro, Miura, Kasumi, Endo, Fumie, Nakagomi, Shinji
• Format: Journal Article
• Language: English
• Published: 15.01.2007
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.2432946

β - Ga 2 O 3 thin films have been prepared on (0001) sapphire substrates by the sol-gel method. X-ray diffraction showed that β-Ga2O3 polycrystalline films were formed at heat-treatment temperatures above 600°C. With increasing heat-treatment temperature above 900°C, the lattice constants of the β-G...