Band Edge Emission Improvement by Energy Transfer in Hybrid Ⅲ-Nitride/Organic Semiconductor Nanostructure

• Published in: Chinese physics letters Vol. 33; no. 10; pp. 132 - 135
• Main Author: 蒋府龙 刘亚莹 李扬扬 陈鹏 刘斌 谢自力 修向前 华雪梅 韩平 施毅 张荣 郑有炓
• Format: Journal Article
• Language: English
• Published: 01.10.2016
• Subjects: 混合氮化物/有机半导体; 的带边发射改进; 纳米结构; 能量转移

GaN nanorods are fabricated using inductively coupled plasma etching with Ni nano-island masks. The poly [2- methoxy-5-（2-ethyl）hexoxy-l,4-phenylenevinylene] （MEH-PPV）/GaN-nanorod hybrid structure is fabricated by depositing the MEH-PPV film on the GaN nanorods by using the spin-coating process. In...