Experimental Identification and Validation of a Crystal Plasticity Model for a Low Carbon Steel on Different Length Scales

• Published in: International journal of material forming Vol. 3; no. Suppl 1; pp. 65 - 68
• Main Authors: Hoffmann, T., Bertram, A., Shim, S., Tischler, J. Z., Larson, B. C.
• Format: Journal Article
• Language: English
• Published: Paris Springer-Verlag 01.04.2010
• Subjects: CAE) and Design; Computational Intelligence; Computer-Aided Engineering (CAD; Engineering; Machines; Manufacturing; Materials Science; Mechanical Engineering; Multiscale approaches: A. M. Habraken; Processes; low carbon steel; micro-indentation; identification; validation; crystal plasticity; lattice rotations
• DOI: 10.1007/s12289-010-0708-1
• ISSN: 1960-6206

Micro-macro approaches are of increasing importance for metal forming simulations and, accordingly, the number of new micro-macro models is increasing as well. Thus, there is a need for adequate identification and validation methods for such models. These methods can be based on experiments on the polycrystalline scale (macro scale), but the use of experiments on the individual single-crystal grain scale (micro scale) has been suggested as well. In this presentation, experiments on both scales and, in parallel, FEM-simulations are presented, in order to compare the results of both approaches. All specimens stem from a rolled sheet of the deep-drawing steel DC04. In addition to the usual macroscopic shear and tensile tests, microscopic indenter tests have been performed. From the micro-indentation tests, which have been applied to single grains of the polycrystalline DC04 steel sheet, various types of deformation data can be measured. Within this presentation we will focus on orientation changes induced by spherical-indentation in the region below the indent, which have been measured using micron-resolution 3D x-ray microscopy and simulated using FEM. In addition, the sensitivity of the calculated orientation changes with respect to {110} versus {112} slip planes is discussed.