Influence on the sp3/sp2 character of the carbon on the insertion of nitrogen in RFMS carbon nitride films
RFMS carbon nitride films have been elaborated at several substrate temperatures between 150 °C and 450 °C, where they evolve from a highly resistive to highly conductive comportment. Their local structure has been determined from X-ray photoemission, Raman and infrared spectroscopic results. The fi...
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Published in | Diamond and related materials Vol. 17; no. 4-5; pp. 700 - 704 |
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Main Authors | , , , , |
Format | Conference Proceeding Journal Article |
Language | English |
Published |
Amsterdam
Elsevier
01.04.2008
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Subjects | |
Online Access | Get full text |
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Summary: | RFMS carbon nitride films have been elaborated at several substrate temperatures between 150 °C and 450 °C, where they evolve from a highly resistive to highly conductive comportment. Their local structure has been determined from X-ray photoemission, Raman and infrared spectroscopic results. The films composition has been measured by nuclear reaction analysis and elastic recoil detection. We will correlate the strong modifications of the electronic properties of the films to their well characterized structural changes. We will show how the substrate temperature acts on the incorporation of nitrogen in carboneous RFMS films and which is the resulting consequence on the sp3/sp2 character of the carbon network. |
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ISSN: | 0925-9635 1879-0062 |
DOI: | 10.1016/j.diamond.2007.12.031 |