Influence on the sp3/sp2 character of the carbon on the insertion of nitrogen in RFMS carbon nitride films

RFMS carbon nitride films have been elaborated at several substrate temperatures between 150 °C and 450 °C, where they evolve from a highly resistive to highly conductive comportment. Their local structure has been determined from X-ray photoemission, Raman and infrared spectroscopic results. The fi...

Full description

Saved in:
Bibliographic Details
Published inDiamond and related materials Vol. 17; no. 4-5; pp. 700 - 704
Main Authors BOUCHET-FABRE, B, LAZAR, G, BALLUTAUD, D, GODET, C, ZELLAMA, K
Format Conference Proceeding Journal Article
LanguageEnglish
Published Amsterdam Elsevier 01.04.2008
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:RFMS carbon nitride films have been elaborated at several substrate temperatures between 150 °C and 450 °C, where they evolve from a highly resistive to highly conductive comportment. Their local structure has been determined from X-ray photoemission, Raman and infrared spectroscopic results. The films composition has been measured by nuclear reaction analysis and elastic recoil detection. We will correlate the strong modifications of the electronic properties of the films to their well characterized structural changes. We will show how the substrate temperature acts on the incorporation of nitrogen in carboneous RFMS films and which is the resulting consequence on the sp3/sp2 character of the carbon network.
ISSN:0925-9635
1879-0062
DOI:10.1016/j.diamond.2007.12.031