Design of Curie point written magnetoresistance random access memory cells

• Published in: Journal of applied physics Vol. 93; no. 10; pp. 7304 - 7306
• Main Authors: Daughton, J. M., Pohm, A. V.
• Format: Journal Article
• Language: English
• Published: 15.05.2003

Very high density magnetoresistance random access memory (MRAM) cells may be subject to thermal upset. This article describes designs that enhance thermal stability and increase ultimate density by using the combination of heat and magnetic field for writing data. The basic storage mechanism can be...