APA (7th ed.) Citation

Daughton, J. M., & Pohm, A. V. (2003). Design of Curie point written magnetoresistance random access memory cells. Journal of applied physics, 93(10), 7304-7306. https://doi.org/10.1063/1.1557373

Chicago Style (17th ed.) Citation

Daughton, J. M., and A. V. Pohm. "Design of Curie Point Written Magnetoresistance Random Access Memory Cells." Journal of Applied Physics 93, no. 10 (2003): 7304-7306. https://doi.org/10.1063/1.1557373.

MLA (9th ed.) Citation

Daughton, J. M., and A. V. Pohm. "Design of Curie Point Written Magnetoresistance Random Access Memory Cells." Journal of Applied Physics, vol. 93, no. 10, 2003, pp. 7304-7306, https://doi.org/10.1063/1.1557373.