Gallium nitride heterostructure field-effect transistor with a heat-removal system based on a trench in the passivation layer filled by a high thermal conductivity material - Volcheck, V. S.; Stempitsky, V. R. (Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, 2021)
Keywords: gallium nitride; grapheme; heat-removal system; heterostructure field-effect transistor; passivation layer; power electronics; self-heating simulation; temperature; thermal conductivity