Reliability and failure analysis in power GaN-HEMTs: An overview

• Published in: 2017 IEEE International Reliability Physics Symposium (IRPS) pp. 3B-2.1 - 3B-2.8
• Main Authors: Meneghini, Matteo, Rossetto, Isabella, De Santi, Carlo, Rampazzo, Fabiana, Tajalli, Alaleh, Barbato, Alessandro, Ruzzarin, Maria, Borga, Matteo, Canato, Eleonora, Zanoni, Enrico, Meneghesso, Gaudenzio
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.04.2017
• Subjects: defect; Degradation; Gallium nitride; GaN; HEMTs; Logic gates; MODFETs; reliability; Stress; transistor

Power GaN transistors have recently demonstrated to be excellent devices for application in power electronics. The high breakdown field and the superior mobility of the 2-dimensional electron gas allow to fabricate transistors with low resistive and switching losses, that permit to increase the effi...