Surface morphology and reconstructions of ultra thin Si films grown by solid-phase epitaxy

Solid-phase epitaxy has been performed on Si(100) and Si(111) surfaces at substrate temperatures in the range of 350–650 °C and for film thickness up to a few monolayers. The features of the epitaxial films were acquired by scanning tunnelling microscopy. Each surface displays a complete epitaxial l...

Full description

Saved in:
Bibliographic Details
Published inThin solid films Vol. 294; no. 1; pp. 88 - 92
Main Authors Zhang, Z, Kulakov, M.A, Bullemer, B
Format Journal Article
LanguageEnglish
Published Elsevier B.V 15.02.1997
Subjects
Online AccessGet full text

Cover

Loading…