Surface morphology and reconstructions of ultra thin Si films grown by solid-phase epitaxy
Solid-phase epitaxy has been performed on Si(100) and Si(111) surfaces at substrate temperatures in the range of 350–650 °C and for film thickness up to a few monolayers. The features of the epitaxial films were acquired by scanning tunnelling microscopy. Each surface displays a complete epitaxial l...
Saved in:
Published in | Thin solid films Vol. 294; no. 1; pp. 88 - 92 |
---|---|
Main Authors | , , |
Format | Journal Article |
Language | English |
Published |
Elsevier B.V
15.02.1997
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Be the first to leave a comment!