Au-Free AlGaN/GaN HEMT on Flexible Kapton Substrate
In this article, we report on the electrical performance of AlGaN/GaN high-electron mobility transistors (HEMTs) fabricated using gold (Au)-free process, after being transferred onto flexible Kapton tape. The transfer process followed in this work can be easily scaled-up to wafer level and involves...
Saved in:
Published in | IEEE transactions on electron devices Vol. 69; no. 8; pp. 4212 - 4217 |
---|---|
Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
New York
IEEE
01.08.2022
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
Cover
Loading…
Abstract | In this article, we report on the electrical performance of AlGaN/GaN high-electron mobility transistors (HEMTs) fabricated using gold (Au)-free process, after being transferred onto flexible Kapton tape. The transfer process followed in this work can be easily scaled-up to wafer level and involves a relatively simple process of epoxy bonding of the thin device layer onto the Kapton substrate. Electrical characteristics of the flexible HEMT indicate 5%-10% higher ON-current when bent with a radius of curvature of 2.1 cm (at low drain bias voltages), while the OFF-state performance remains unaffected. Initially, 2-DEG properties such as field-effect mobility and carrier concentration have been extracted. While FATFET measurements indicate negligible change in field-effect mobility, <inline-formula> <tex-math notation="LaTeX">{C} </tex-math></inline-formula>-<inline-formula> <tex-math notation="LaTeX">{V} </tex-math></inline-formula> measurements indicate <inline-formula> <tex-math notation="LaTeX">\sim 10 </tex-math></inline-formula>% reduction in 2-DEG concentration after transfer. The comparison of the electrical characteristics of Au-free HEMTs indicates <inline-formula> <tex-math notation="LaTeX">\sim 50 </tex-math></inline-formula>% reduction in the ON-current of the transferred devices. This is attributed to heating of the transistor channel caused due to low thermal conductivity of the polymer Kapton tape. Electrical characteristics of the flexible HEMT carried out under drain pulsing further support the above observation. This work is among one of the few reports on Au-free AlGaN/GaN HEMT operation on flexible Kapton tape. |
---|---|
AbstractList | In this article, we report on the electrical performance of AlGaN/GaN high-electron mobility transistors (HEMTs) fabricated using gold (Au)-free process, after being transferred onto flexible Kapton tape. The transfer process followed in this work can be easily scaled-up to wafer level and involves a relatively simple process of epoxy bonding of the thin device layer onto the Kapton substrate. Electrical characteristics of the flexible HEMT indicate 5%-10% higher ON-current when bent with a radius of curvature of 2.1 cm (at low drain bias voltages), while the OFF-state performance remains unaffected. Initially, 2-DEG properties such as field-effect mobility and carrier concentration have been extracted. While FATFET measurements indicate negligible change in field-effect mobility, <inline-formula> <tex-math notation="LaTeX">{C} </tex-math></inline-formula>-<inline-formula> <tex-math notation="LaTeX">{V} </tex-math></inline-formula> measurements indicate <inline-formula> <tex-math notation="LaTeX">\sim 10 </tex-math></inline-formula>% reduction in 2-DEG concentration after transfer. The comparison of the electrical characteristics of Au-free HEMTs indicates <inline-formula> <tex-math notation="LaTeX">\sim 50 </tex-math></inline-formula>% reduction in the ON-current of the transferred devices. This is attributed to heating of the transistor channel caused due to low thermal conductivity of the polymer Kapton tape. Electrical characteristics of the flexible HEMT carried out under drain pulsing further support the above observation. This work is among one of the few reports on Au-free AlGaN/GaN HEMT operation on flexible Kapton tape. In this article, we report on the electrical performance of AlGaN/GaN high-electron mobility transistors (HEMTs) fabricated using gold (Au)-free process, after being transferred onto flexible Kapton tape. The transfer process followed in this work can be easily scaled-up to wafer level and involves a relatively simple process of epoxy bonding of the thin device layer onto the Kapton substrate. Electrical characteristics of the flexible HEMT indicate 5%–10% higher ON-current when bent with a radius of curvature of 2.1 cm (at low drain bias voltages), while the OFF-state performance remains unaffected. Initially, 2-DEG properties such as field-effect mobility and carrier concentration have been extracted. While FATFET measurements indicate negligible change in field-effect mobility, [Formula Omitted]–[Formula Omitted] measurements indicate [Formula Omitted]% reduction in 2-DEG concentration after transfer. The comparison of the electrical characteristics of Au-free HEMTs indicates [Formula Omitted]% reduction in the ON-current of the transferred devices. This is attributed to heating of the transistor channel caused due to low thermal conductivity of the polymer Kapton tape. Electrical characteristics of the flexible HEMT carried out under drain pulsing further support the above observation. This work is among one of the few reports on Au-free AlGaN/GaN HEMT operation on flexible Kapton tape. |
Author | Muralidharan, R. Niranjan, S Sen, Prosenjit Nath, Digbijoy N. |
Author_xml | – sequence: 1 givenname: S orcidid: 0000-0002-6355-9528 surname: Niranjan fullname: Niranjan, S email: niranjans@iisc.ac.in organization: Centre for Nano Science and Engineering (CeNSE), Indian Institute of Science (IISc), Bengaluru, India – sequence: 2 givenname: R. surname: Muralidharan fullname: Muralidharan, R. email: rmuralidharan@iisc.ac.in organization: Centre for Nano Science and Engineering (CeNSE), Indian Institute of Science (IISc), Bengaluru, India – sequence: 3 givenname: Prosenjit orcidid: 0000-0001-6519-1707 surname: Sen fullname: Sen, Prosenjit email: prosenjits@iisc.ac.in organization: Centre for Nano Science and Engineering (CeNSE), Indian Institute of Science (IISc), Bengaluru, India – sequence: 4 givenname: Digbijoy N. surname: Nath fullname: Nath, Digbijoy N. email: digbijoy@iisc.ac.in organization: Centre for Nano Science and Engineering (CeNSE), Indian Institute of Science (IISc), Bengaluru, India |
BookMark | eNo9kE1Lw0AQhhepYFu9C14CntPu7PceS-2HWPVg7ssmTKAlJnU3Af33bmnpYRheeN4ZeCZk1HYtEvIIdAZA7bxYvcwYZWzGwSim9A0Zg5Q6t0qoERlTCia33PA7MonxkKISgo0JXwz5OiBmi2bjP-Zpsu3qvci6Nls3-LsvG8ze_LFP-WsoYx98j_fktvZNxIfLnpJivSqW23z3uXldLnZ5xRj0ea2sAiMY00gB6lpzY2oOHDVaWpWGW8lYaQT4ElAIqRl47qlEVmnqSz4lz-ezx9D9DBh7d-iG0KaPjikrQQppVKLomapCF2PA2h3D_tuHPwfUncy4ZMadzLiLmVR5Olf2iHjFrQEtqOT_MKVcsg |
CODEN | IETDAI |
CitedBy_id | crossref_primary_10_3390_mi14040764 crossref_primary_10_1016_j_micrna_2022_207431 crossref_primary_10_1063_5_0151662 |
Cites_doi | 10.1109/TED.2016.2646361 10.1109/TED.2009.2032614 10.1002/adma.201701838 10.1109/NEMO49486.2020.9343508 10.7567/jjap.53.04ef01 10.1109/MWSYM.2015.7167085 10.1021/acsnano.9b05999 10.1002/0471749095 10.1109/EDSSC.2019.8754212 10.1109/EPTC.2017.8277521 10.1063/1.4919098 10.1109/TED.2015.2469151 10.1143/apex.5.072102 10.1109/LED.2010.2091251 10.1109/TED.2013.2238943 10.1109/IEDM.2015.7409663 10.1109/TED.2019.2961956 10.1021/nl301699k 10.1109/TED.2021.3140193 10.1109/TSM.2016.2599839 10.7567/apex.8.041001 10.1002/adma.201601721 10.1109/TED.2021.3083475 10.1109/CSICS.2016.7751008 10.1109/TCPMT.2019.2962551 10.1109/LED.2011.2114322 10.1063/5.0025587 |
ContentType | Journal Article |
Copyright | Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2022 |
Copyright_xml | – notice: Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2022 |
DBID | 97E RIA RIE AAYXX CITATION 7SP 8FD L7M |
DOI | 10.1109/TED.2022.3186267 |
DatabaseName | IEEE All-Society Periodicals Package (ASPP) 2005-present IEEE All-Society Periodicals Package (ASPP) Online IEL CrossRef Electronics & Communications Abstracts Technology Research Database Advanced Technologies Database with Aerospace |
DatabaseTitle | CrossRef Technology Research Database Advanced Technologies Database with Aerospace Electronics & Communications Abstracts |
DatabaseTitleList | Technology Research Database |
Database_xml | – sequence: 1 dbid: RIE name: IEEE/IET Electronic Library url: https://proxy.k.utb.cz/login?url=https://ieeexplore.ieee.org/ sourceTypes: Publisher |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Engineering |
EISSN | 1557-9646 |
EndPage | 4217 |
ExternalDocumentID | 10_1109_TED_2022_3186267 9817405 |
Genre | orig-research |
GrantInformation_xml | – fundername: Department of Science and Technology (DST) through NNetRA – fundername: IMPRINT-II through the Science and Engineering Research Board (SERB) funderid: 10.13039/501100001843 – fundername: Ministry of Human Resource Development (MHRD) through the NIEIN Project funderid: 10.13039/501100004541 – fundername: Ministry of Electronics and Information Technology (MeitY) funderid: 10.13039/501100008628 – fundername: Indian Space Research Organization/Semi-Conductor Laboratory (ISRO/SCL) funderid: 10.13039/501100001413 – fundername: Centre for Nano Science and Engineering (CeNSE) |
GroupedDBID | -~X .DC 0R~ 29I 3EH 4.4 5GY 5VS 6IK 97E AAJGR AASAJ ABQJQ ABVLG ACGFO ACGFS ACIWK ACKIV ACNCT AENEX AETIX AI. AIBXA AKJIK ALLEH ALMA_UNASSIGNED_HOLDINGS ASUFR ATWAV B-7 BEFXN BFFAM BGNUA BKEBE BPEOZ CS3 DU5 EBS EJD F5P HZ~ H~9 IAAWW IBMZZ ICLAB IDIHD IFIPE IFJZH IPLJI JAVBF LAI M43 MS~ O9- OCL P2P RIA RIE RIG RNS TAE TN5 VH1 VJK VOH XFK AAYXX CITATION 7SP 8FD L7M |
ID | FETCH-LOGICAL-c221t-f696184227e011ff7388f313e7e90cb839522b841ab1e445721a3a05e2c70ab3 |
IEDL.DBID | RIE |
ISSN | 0018-9383 |
IngestDate | Thu Oct 10 18:35:54 EDT 2024 Fri Aug 23 02:33:03 EDT 2024 Wed Jun 26 19:25:30 EDT 2024 |
IsPeerReviewed | true |
IsScholarly | true |
Issue | 8 |
Language | English |
LinkModel | DirectLink |
MergedId | FETCHMERGED-LOGICAL-c221t-f696184227e011ff7388f313e7e90cb839522b841ab1e445721a3a05e2c70ab3 |
ORCID | 0000-0002-6355-9528 0000-0001-6519-1707 |
PQID | 2695154586 |
PQPubID | 85466 |
PageCount | 6 |
ParticipantIDs | ieee_primary_9817405 proquest_journals_2695154586 crossref_primary_10_1109_TED_2022_3186267 |
PublicationCentury | 2000 |
PublicationDate | 2022-08-01 |
PublicationDateYYYYMMDD | 2022-08-01 |
PublicationDate_xml | – month: 08 year: 2022 text: 2022-08-01 day: 01 |
PublicationDecade | 2020 |
PublicationPlace | New York |
PublicationPlace_xml | – name: New York |
PublicationTitle | IEEE transactions on electron devices |
PublicationTitleAbbrev | TED |
PublicationYear | 2022 |
Publisher | IEEE The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher_xml | – name: IEEE – name: The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
References | ref13 ref15 ref14 ref11 ref2 ref1 ref17 ref16 ref19 ref18 Peralagu (ref12) 2019 Ho Kwan (ref10) 2014 ref24 ref23 ref26 ref25 ref20 ref22 ref21 ref28 ref27 ref29 ref8 ref7 ref9 Harrouche (ref30) ref4 ref3 ref6 ref5 |
References_xml | – ident: ref7 doi: 10.1109/TED.2016.2646361 – ident: ref25 doi: 10.1109/TED.2009.2032614 – ident: ref6 doi: 10.1002/adma.201701838 – start-page: 17.6.1 year: 2014 ident: ref10 article-title: CMOS-compatible GaN-on-Si field-effect transistors for high voltage power applications publication-title: IEDM Tech. Dig. contributor: fullname: Ho Kwan – ident: ref5 doi: 10.1109/NEMO49486.2020.9343508 – ident: ref15 doi: 10.7567/jjap.53.04ef01 – ident: ref4 doi: 10.1109/MWSYM.2015.7167085 – ident: ref18 doi: 10.1021/acsnano.9b05999 – ident: ref20 doi: 10.1002/0471749095 – ident: ref27 doi: 10.1109/EDSSC.2019.8754212 – ident: ref17 doi: 10.1109/EPTC.2017.8277521 – ident: ref26 doi: 10.1063/1.4919098 – ident: ref21 doi: 10.1109/TED.2015.2469151 – ident: ref3 doi: 10.1143/apex.5.072102 – ident: ref8 doi: 10.1109/LED.2010.2091251 – ident: ref1 doi: 10.1109/TED.2013.2238943 – ident: ref13 doi: 10.1109/IEDM.2015.7409663 – ident: ref24 doi: 10.1109/TED.2019.2961956 – volume-title: Proc. WOCSDICE ident: ref30 article-title: Above 70% PAE in Q-band with AlN/GaN HEMTs structures contributor: fullname: Harrouche – ident: ref2 doi: 10.1021/nl301699k – ident: ref19 doi: 10.1109/TED.2021.3140193 – ident: ref9 doi: 10.1109/TSM.2016.2599839 – start-page: 398 year: 2019 ident: ref12 article-title: CMOS-compatible GaN-based devices on 200 mm-Si for RF applications: Integration and performance publication-title: IEDM Tech. Dig. contributor: fullname: Peralagu – ident: ref16 doi: 10.7567/apex.8.041001 – ident: ref23 doi: 10.1002/adma.201601721 – ident: ref29 doi: 10.1109/TED.2021.3083475 – ident: ref11 doi: 10.1109/CSICS.2016.7751008 – ident: ref22 doi: 10.1109/TCPMT.2019.2962551 – ident: ref14 doi: 10.1109/LED.2011.2114322 – ident: ref28 doi: 10.1063/5.0025587 |
SSID | ssj0016442 |
Score | 2.4583604 |
Snippet | In this article, we report on the electrical performance of AlGaN/GaN high-electron mobility transistors (HEMTs) fabricated using gold (Au)-free process, after... |
SourceID | proquest crossref ieee |
SourceType | Aggregation Database Publisher |
StartPage | 4212 |
SubjectTerms | AlGaN/GaN high-electron mobility transistors (HEMT) Aluminum gallium nitride Aluminum gallium nitrides Au-free process Carrier density CMOS compatibility Electrical resistivity flexible electronics Gallium nitrides HEMTs High electron mobility transistors Kapton Kapton (trademark) Logic gates Performance evaluation Polyimide resins Radius of curvature Reduction Semiconductor devices Silicon Substrates Thermal conductivity Wide band gap semiconductors |
Title | Au-Free AlGaN/GaN HEMT on Flexible Kapton Substrate |
URI | https://ieeexplore.ieee.org/document/9817405 https://www.proquest.com/docview/2695154586 |
Volume | 69 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV07T8MwELZKJxh4FUShIA8sSKSNnYedsUINFaiditQtsp3LQtWikiz8es5OUvEaGCJlSCLrznf3Xe78HSG3wJgAmeceRpfICzFGeIkB4WmRyMQE3BjXVTmbx9OX8GkZLTvkfncWBgBc8xkM7a2r5ecbU9lfZaNEIn62hKV70uf1Wa1dxQDjes0MztCAMe1qS5J-MkIXgIkg55ifWvwuvoUgN1PllyN20SU9IrN2XXVTyeuwKvXQfPygbPzvwo_JYQMz6bjeFyekA-tTcvCFfLBHgnHlpVsAOl49qvkILzqdzBZ0s6apZcnUK6DP6g2xIbXexbHYnpFFOlk8TL1mhIJnOGelV8RuogvnAtCQi0IEUhYBC0BA4huN6Ajxl5YhU5pBGEaYD6pA-RFwI3ylg3PSXW_WcEGoygvQUmH2EUGoi0DqIhFaR8z4huuQ9cldK9TsrSbKyFyC4ScZKiCzCsgaBfRJz8po91wjnj4ZtFrIGkt6z3iMGNBW9-LLv9-6Ivv223VT3oB0y20F1wgUSn3jdsgnqEm2pQ |
link.rule.ids | 315,786,790,802,27955,27956,55107 |
linkProvider | IEEE |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV07T8NADLYqGICBV0EUCmRgQSJt7pL0krFCLYU2nYLULcpdnYUqrUqy8OvxXdKK18AQKUOinOyz_Tn2fQa4Q8YEBvO5TdHFtz2KEXaoUNhShEGoXK6U6aqMpr3Rq_cy82cNeNiehUFE03yGHX1ravnzpSr1r7JuGBB-1oSluxTnHVGd1trWDCiyV9zgjEyYEq9NUdIJu-QEKBXknDJUjeDFtyBkpqr8csUmvgyPINqsrGoreeuUheyojx-kjf9d-jEc1kDT6lc74wQamJ_CwRf6wSa4_dIerhGt_uIpnXbpskaDKLaWuTXUPJlygdY4XRE6tLR_MTy2ZxAPB_HjyK6HKNiKc1bYWc_MdOFcIJlylgk3CDKXuSgwdJQkfEQITAYeSyVDz_MpI0zd1PGRK-Gk0j2HnXyZ4wVY6TxDGaSUf_joycwNZBYKKX2mHMWlx1pwvxFqsqqoMhKTYjhhQgpItAKSWgEtaGoZbZ-rxdOC9kYLSW1L7wnvEQrU9b3e5d9v3cLeKI4myeR5Or6Cff2dqkWvDTvFusRrgg2FvDG75RN8Nrn5 |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Au-Free+AlGaN%2FGaN+HEMT+on+Flexible+Kapton+Substrate&rft.jtitle=IEEE+transactions+on+electron+devices&rft.au=Niranjan%2C+S&rft.au=Muralidharan%2C+R.&rft.au=Sen%2C+Prosenjit&rft.au=Nath%2C+Digbijoy+N.&rft.date=2022-08-01&rft.issn=0018-9383&rft.eissn=1557-9646&rft.volume=69&rft.issue=8&rft.spage=4212&rft.epage=4217&rft_id=info:doi/10.1109%2FTED.2022.3186267&rft.externalDBID=n%2Fa&rft.externalDocID=10_1109_TED_2022_3186267 |
thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0018-9383&client=summon |
thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0018-9383&client=summon |
thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0018-9383&client=summon |