Side-Input GaAs Laser Power Converters With Gradient AlGaAs Waveguide

• Published in: IEEE electron device letters Vol. 43; no. 10; pp. 1717 - 1719
• Main Authors: Khvostikov, Vladimir P., Panchak, Alexander N., Khvostikova, Olga A., Pokrovskiy, Pavel. V.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.10.2022; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Antireflection coatings; efficiency; Epitaxial growth; Gallium arsenide; Gallium arsenide lasers; Irradiation; laser power converter; Lasers; Liquid phase epitaxy; Liquid phases; Optical fibers; P-n junctions; Photovoltaic; Photovoltaic systems; Power converters; Power lasers; Pulsed lasers; Quantum efficiency; Radiation effects; Semiconductor crystals; Semiconductor lasers; vertical p-n junction; Waveguide lasers; Waveguides

Vertical p-n junction photovoltaic converters are the subject of this work. In these devices, light is injected into the semiconductor crystal through a side interface. So the current-carrying contacts are continuous. Therefore, the advantages of this design compared to the traditional (horizontal p...