Angle-resolved photoemission spectroscopy of the 1 × 1 ordered overlayers on iodine-saturated GaAs(001) and InAs(001)

• Published in: Surface science Vol. 352; pp. 387 - 390
• Main Authors: Varekamp, P.R., Håkansson, M.C., Kanski, J., Kowalski, B.J., Olsson, L.Ö., Ilver, L., He, Z.Q., Yarmoff, J.A., Karlsson, U.O.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 15.05.1996
• Subjects: Angle resolved photoemission; Atom-solid reactions; Gallium arsenide; Indium arsenide; Iodine; Surface electronic phenomena; Surface relaxation and reconstruction; Surface relaxation and reconstruction; Gallium arsenide; Surface electronic phenomena; Indium arsenide; Angle resolved photoemission; Atom-solid reactions; Iodine
• ISSN: 0039-6028; 1879-2758
• DOI: 10.1016/0039-6028(95)01166-8

Angle-resolved valence band photoelectron spectra are collected from 1 × 1 ordered overlayers on I 2-saturated GaAs(001)-4 × 1, -c(2 × 8), and InAs(001)-c(8 × 2). A high-intensity dispersive surface state, located approximately below the valence band maximum, is observed in each case. The state passes through an open lens in the projected bulk density of states and disperses symmetrically around the surface Brillouin zone edge. For all surfaces studied, the state is stronger when excited with the electric field polarized in the [110], as compared to the [ 1 10], azimuth. Since the state is independent of the termination of the initial surface, and since iodine bonds primarily to the outermost element, the state must result from delocalization of the electron states in the overlayer, and is not related to bonding with the substrate.