A Novel SCR Topology of Embedded Bipolar Transistor With High-Holding Voltage and High-Temperature Tolerance for ESD Protection

• Published in: IEEE transactions on electron devices Vol. 72; no. 9; pp. 4635 - 4641
• Main Authors: Liu, Yujie, Wang, Yang, Zhang, Ke, Yang, Jian, Jin, Xiangliang
• Format: Journal Article
• Language: English
• Published: IEEE 01.09.2025
• Subjects: Automotive electronics; bipolar transistor; Bipolar transistors; Discharges (electric); electrostatic discharge (ESD); Electrostatic discharge protection; Impact ionization; Junctions; Power system management; Robustness; Semiconductor process modeling; silicon-controlled rectifier (SCR); Topology; Transistors
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2025.3586260

Automotive electronics typically operate in high-temperature environments with significant electrostatic interference, which increases the reliability requirements for on-chip electrostatic discharge (ESD) protection. To better address these challenging conditions, this article presents a novel sili...