A novel tunable two dimensional ferroelectric material SbAs(CH2OCH3)2 with topological and valley polarized properties

• Published in: Physica. E, Low-dimensional systems & nanostructures Vol. 138; p. 115123
• Main Authors: Ren, Miaojuan, Zhang, Menghan
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.04.2022
• Subjects: Ferroelectricity; SbAs; Topological insulator; Topological insulator; SbAs; Ferroelectricity
• ISSN: 1386-9477; 1873-1759
• DOI: 10.1016/j.physe.2021.115123

In recent years, two-dimensional (2D) materials that have ferroelectric, valley polarization as well as topological order is a major focal topic of nanomaterials research. We studied the monolayer (ML) SbAs(CH2OCH3)2 based on first-principles calculations. The adsorption energy results and phono spectra results show that the structure are stable. The in-plane ferroelectricity can be adjusted by rotating functional groups, CH2OCH3-. Chosen a suitable substrate (for example, diagonal boron nitride), an in-plane electric field can be supplied to control the ferroelectric switch. The topological order can be adjusted by stress stretching. After 6% tensile stress, it represents the quantum spin Hall effect. Considering energy band of spin polarization, it shows that the spin-splitting Dirac states at the K and -K valleys have opposite spin moments. The discovery of coexisting ferroelectric, valley polarization and topology in functional 2D materials opens a way for non-volatile memory storage and spintronics applications. •The in-plane ferroelectricity of ML SbAs(CH2OCH3)2 can be adjusted by rotating functional groups.•The topological order can be adjusted by stress stretching.•The spin-splitting Dirac states at the K and -K valleys have been observed.