Doped tellurite glasses: Extending near‐infrared emission for near‐2.0‐μm amplifiers

Tm3+‐singly‐doped and Tm3+‐/Ho3+‐codoped TeO2‐Bi2O3‐ZnO‐Li2O‐Nb2O5 (TBZLN) tellurite glasses were successfully prepared by the melt‐quenching technique. Emission characteristics and energy transfer mechanisms were studied upon 785‐nm laser diode excitation. A significant enhancement of emission inte...

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Published inInternational journal of applied glass science Vol. 8; no. 2; pp. 216 - 225
Main Authors Seshadri, M., Anjos, V., Bell, M. J. V., Barbosa, Luiz C., Bosco, Giácomo B. F., Tessler, Leandro R., Suresh Kumar, J., Graça, Manuel P. F., Soares, Manuel. J., Radha, M., Ratnakaram, Y. C.
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LanguageEnglish
Published Westerville Wiley Subscription Services, Inc 01.06.2017
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Abstract Tm3+‐singly‐doped and Tm3+‐/Ho3+‐codoped TeO2‐Bi2O3‐ZnO‐Li2O‐Nb2O5 (TBZLN) tellurite glasses were successfully prepared by the melt‐quenching technique. Emission characteristics and energy transfer mechanisms were studied upon 785‐nm laser diode excitation. A significant enhancement of emission intensity at 1.81 μm with increasing concentration of Tm3+ ions has been observed while increase in the emission intensity at 2.0 μm with increasing concentration of Ho3+ has been observed up to the equal concentration of Tm3+ (0.5 mol%) in TBZLN glasses. The stimulated emission cross section of Tm3+: 3F4→3H6 (5.20×10−21 cm2) and Ho3+: 5I7→5I8 (4.00×10−21 cm2) in 1.0 mol% Tm3+‐doped and 0.5 mol% Tm3+/1.0 mol% Ho3+‐codoped TBZLN glasses are higher compared with the reported and are found to be excellent candidates for solid‐state lasers operating at ~1.8 and 2.0 μm, respectively. The extension of near‐infrared (NIR) emission of Tm3+ with Ho3+ ions provides the possibility of using these materials for broadband NIR amplifiers.
AbstractList Tm3+‐singly‐doped and Tm3+‐/Ho3+‐codoped TeO2‐Bi2O3‐ZnO‐Li2O‐Nb2O5 (TBZLN) tellurite glasses were successfully prepared by the melt‐quenching technique. Emission characteristics and energy transfer mechanisms were studied upon 785‐nm laser diode excitation. A significant enhancement of emission intensity at 1.81 μm with increasing concentration of Tm3+ ions has been observed while increase in the emission intensity at 2.0 μm with increasing concentration of Ho3+ has been observed up to the equal concentration of Tm3+ (0.5 mol%) in TBZLN glasses. The stimulated emission cross section of Tm3+: 3F4→3H6 (5.20×10−21 cm2) and Ho3+: 5I7→5I8 (4.00×10−21 cm2) in 1.0 mol% Tm3+‐doped and 0.5 mol% Tm3+/1.0 mol% Ho3+‐codoped TBZLN glasses are higher compared with the reported and are found to be excellent candidates for solid‐state lasers operating at ~1.8 and 2.0 μm, respectively. The extension of near‐infrared (NIR) emission of Tm3+ with Ho3+ ions provides the possibility of using these materials for broadband NIR amplifiers.
Tm3+‐singly‐doped and Tm3+‐/Ho3+‐codoped TeO2‐Bi2O3‐ZnO‐Li2O‐Nb2O5 (TBZLN) tellurite glasses were successfully prepared by the melt‐quenching technique. Emission characteristics and energy transfer mechanisms were studied upon 785‐nm laser diode excitation. A significant enhancement of emission intensity at 1.81 μm with increasing concentration of Tm3+ ions has been observed while increase in the emission intensity at 2.0 μm with increasing concentration of Ho3+ has been observed up to the equal concentration of Tm3+ (0.5 mol%) in TBZLN glasses. The stimulated emission cross section of Tm3+: 3F4→3H6 (5.20×10−21 cm2) and Ho3+: 5I7→5I8 (4.00×10−21 cm2) in 1.0 mol% Tm3+‐doped and 0.5 mol% Tm3+/1.0 mol% Ho3+‐codoped TBZLN glasses are higher compared with the reported and are found to be excellent candidates for solid‐state lasers operating at ~1.8 and 2.0 μm, respectively. The extension of near‐infrared (NIR) emission of Tm3+ with Ho3+ ions provides the possibility of using these materials for broadband NIR amplifiers.
Abstract Tm 3+ ‐singly‐doped and Tm 3+ ‐/Ho 3+ ‐codoped TeO 2 ‐Bi 2 O 3 ‐ZnO‐Li 2 O‐Nb 2 O 5 ( TBZLN ) tellurite glasses were successfully prepared by the melt‐quenching technique. Emission characteristics and energy transfer mechanisms were studied upon 785‐nm laser diode excitation. A significant enhancement of emission intensity at 1.81 μm with increasing concentration of Tm 3+ ions has been observed while increase in the emission intensity at 2.0 μm with increasing concentration of Ho 3+ has been observed up to the equal concentration of Tm 3+ (0.5 mol%) in TBZLN glasses. The stimulated emission cross section of Tm 3+ : 3 F 4 → 3 H 6 (5.20×10 −21  cm 2 ) and Ho 3+ : 5 I 7 → 5 I 8 (4.00×10 −21  cm 2 ) in 1.0 mol% Tm 3+ ‐doped and 0.5 mol% Tm 3+ /1.0 mol% Ho 3+ ‐codoped TBZLN glasses are higher compared with the reported and are found to be excellent candidates for solid‐state lasers operating at ~1.8 and 2.0 μm, respectively. The extension of near‐infrared ( NIR ) emission of Tm 3+ with Ho 3+ ions provides the possibility of using these materials for broadband NIR amplifiers.
Author Tessler, Leandro R.
Graça, Manuel P. F.
Radha, M.
Seshadri, M.
Anjos, V.
Barbosa, Luiz C.
Bell, M. J. V.
Bosco, Giácomo B. F.
Suresh Kumar, J.
Ratnakaram, Y. C.
Soares, Manuel. J.
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Snippet Tm3+‐singly‐doped and Tm3+‐/Ho3+‐codoped TeO2‐Bi2O3‐ZnO‐Li2O‐Nb2O5 (TBZLN) tellurite glasses were successfully prepared by the melt‐quenching technique....
Abstract Tm 3+ ‐singly‐doped and Tm 3+ ‐/Ho 3+ ‐codoped TeO 2 ‐Bi 2 O 3 ‐ZnO‐Li 2 O‐Nb 2 O 5 ( TBZLN ) tellurite glasses were successfully prepared by the...
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SubjectTerms Amplification
Amplifiers
Broadband
Cross-sections
Emission analysis
Energy transfer
Excitation
Lasers
Near infrared radiation
optical properties
photoluminescence
Quenching
Solid state lasers
Stimulated emission
telluride
Zinc oxide
Title Doped tellurite glasses: Extending near‐infrared emission for near‐2.0‐μm amplifiers
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