Doped tellurite glasses: Extending near‐infrared emission for near‐2.0‐μm amplifiers
Tm3+‐singly‐doped and Tm3+‐/Ho3+‐codoped TeO2‐Bi2O3‐ZnO‐Li2O‐Nb2O5 (TBZLN) tellurite glasses were successfully prepared by the melt‐quenching technique. Emission characteristics and energy transfer mechanisms were studied upon 785‐nm laser diode excitation. A significant enhancement of emission inte...
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Published in | International journal of applied glass science Vol. 8; no. 2; pp. 216 - 225 |
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Main Authors | , , , , , , , , , , |
Format | Journal Article |
Language | English |
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Abstract | Tm3+‐singly‐doped and Tm3+‐/Ho3+‐codoped TeO2‐Bi2O3‐ZnO‐Li2O‐Nb2O5 (TBZLN) tellurite glasses were successfully prepared by the melt‐quenching technique. Emission characteristics and energy transfer mechanisms were studied upon 785‐nm laser diode excitation. A significant enhancement of emission intensity at 1.81 μm with increasing concentration of Tm3+ ions has been observed while increase in the emission intensity at 2.0 μm with increasing concentration of Ho3+ has been observed up to the equal concentration of Tm3+ (0.5 mol%) in TBZLN glasses. The stimulated emission cross section of Tm3+: 3F4→3H6 (5.20×10−21 cm2) and Ho3+: 5I7→5I8 (4.00×10−21 cm2) in 1.0 mol% Tm3+‐doped and 0.5 mol% Tm3+/1.0 mol% Ho3+‐codoped TBZLN glasses are higher compared with the reported and are found to be excellent candidates for solid‐state lasers operating at ~1.8 and 2.0 μm, respectively. The extension of near‐infrared (NIR) emission of Tm3+ with Ho3+ ions provides the possibility of using these materials for broadband NIR amplifiers. |
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AbstractList | Tm3+‐singly‐doped and Tm3+‐/Ho3+‐codoped TeO2‐Bi2O3‐ZnO‐Li2O‐Nb2O5 (TBZLN) tellurite glasses were successfully prepared by the melt‐quenching technique. Emission characteristics and energy transfer mechanisms were studied upon 785‐nm laser diode excitation. A significant enhancement of emission intensity at 1.81 μm with increasing concentration of Tm3+ ions has been observed while increase in the emission intensity at 2.0 μm with increasing concentration of Ho3+ has been observed up to the equal concentration of Tm3+ (0.5 mol%) in TBZLN glasses. The stimulated emission cross section of Tm3+: 3F4→3H6 (5.20×10−21 cm2) and Ho3+: 5I7→5I8 (4.00×10−21 cm2) in 1.0 mol% Tm3+‐doped and 0.5 mol% Tm3+/1.0 mol% Ho3+‐codoped TBZLN glasses are higher compared with the reported and are found to be excellent candidates for solid‐state lasers operating at ~1.8 and 2.0 μm, respectively. The extension of near‐infrared (NIR) emission of Tm3+ with Ho3+ ions provides the possibility of using these materials for broadband NIR amplifiers. Tm3+‐singly‐doped and Tm3+‐/Ho3+‐codoped TeO2‐Bi2O3‐ZnO‐Li2O‐Nb2O5 (TBZLN) tellurite glasses were successfully prepared by the melt‐quenching technique. Emission characteristics and energy transfer mechanisms were studied upon 785‐nm laser diode excitation. A significant enhancement of emission intensity at 1.81 μm with increasing concentration of Tm3+ ions has been observed while increase in the emission intensity at 2.0 μm with increasing concentration of Ho3+ has been observed up to the equal concentration of Tm3+ (0.5 mol%) in TBZLN glasses. The stimulated emission cross section of Tm3+: 3F4→3H6 (5.20×10−21 cm2) and Ho3+: 5I7→5I8 (4.00×10−21 cm2) in 1.0 mol% Tm3+‐doped and 0.5 mol% Tm3+/1.0 mol% Ho3+‐codoped TBZLN glasses are higher compared with the reported and are found to be excellent candidates for solid‐state lasers operating at ~1.8 and 2.0 μm, respectively. The extension of near‐infrared (NIR) emission of Tm3+ with Ho3+ ions provides the possibility of using these materials for broadband NIR amplifiers. Abstract Tm 3+ ‐singly‐doped and Tm 3+ ‐/Ho 3+ ‐codoped TeO 2 ‐Bi 2 O 3 ‐ZnO‐Li 2 O‐Nb 2 O 5 ( TBZLN ) tellurite glasses were successfully prepared by the melt‐quenching technique. Emission characteristics and energy transfer mechanisms were studied upon 785‐nm laser diode excitation. A significant enhancement of emission intensity at 1.81 μm with increasing concentration of Tm 3+ ions has been observed while increase in the emission intensity at 2.0 μm with increasing concentration of Ho 3+ has been observed up to the equal concentration of Tm 3+ (0.5 mol%) in TBZLN glasses. The stimulated emission cross section of Tm 3+ : 3 F 4 → 3 H 6 (5.20×10 −21 cm 2 ) and Ho 3+ : 5 I 7 → 5 I 8 (4.00×10 −21 cm 2 ) in 1.0 mol% Tm 3+ ‐doped and 0.5 mol% Tm 3+ /1.0 mol% Ho 3+ ‐codoped TBZLN glasses are higher compared with the reported and are found to be excellent candidates for solid‐state lasers operating at ~1.8 and 2.0 μm, respectively. The extension of near‐infrared ( NIR ) emission of Tm 3+ with Ho 3+ ions provides the possibility of using these materials for broadband NIR amplifiers. |
Author | Tessler, Leandro R. Graça, Manuel P. F. Radha, M. Seshadri, M. Anjos, V. Barbosa, Luiz C. Bell, M. J. V. Bosco, Giácomo B. F. Suresh Kumar, J. Ratnakaram, Y. C. Soares, Manuel. J. |
Author_xml | – sequence: 1 givenname: M. surname: Seshadri fullname: Seshadri, M. email: seshumeruva@gmail.com organization: Universidade Estadual de Campinas‐UNICAMP – sequence: 2 givenname: V. surname: Anjos fullname: Anjos, V. organization: Univiversidade Federal de Juiz de Fora – sequence: 3 givenname: M. J. V. surname: Bell fullname: Bell, M. J. V. organization: Univiversidade Federal de Juiz de Fora – sequence: 4 givenname: Luiz C. surname: Barbosa fullname: Barbosa, Luiz C. organization: Universidade Estadual de Campinas‐UNICAMP – sequence: 5 givenname: Giácomo B. F. surname: Bosco fullname: Bosco, Giácomo B. F. organization: Universidade Estadual de Campinas‐UNICAMP – sequence: 6 givenname: Leandro R. surname: Tessler fullname: Tessler, Leandro R. organization: Universidade Estadual de Campinas‐UNICAMP – sequence: 7 givenname: J. surname: Suresh Kumar fullname: Suresh Kumar, J. organization: University of Aveiro – sequence: 8 givenname: Manuel P. F. surname: Graça fullname: Graça, Manuel P. F. organization: University of Aveiro – sequence: 9 givenname: Manuel. J. surname: Soares fullname: Soares, Manuel. J. organization: University of Aveiro – sequence: 10 givenname: M. surname: Radha fullname: Radha, M. organization: Sri Venkateswara University – sequence: 11 givenname: Y. C. surname: Ratnakaram fullname: Ratnakaram, Y. C. organization: Sri Venkateswara University |
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CitedBy_id | crossref_primary_10_1016_j_ceramint_2018_08_080 crossref_primary_10_1007_s10854_021_06787_5 crossref_primary_10_1149_2162_8777_acb3fa crossref_primary_10_1016_j_jlumin_2017_12_055 crossref_primary_10_1016_j_jnoncrysol_2019_119855 crossref_primary_10_1016_j_pmatsci_2018_11_003 crossref_primary_10_1016_j_jre_2019_12_006 crossref_primary_10_1038_s41598_023_34591_0 crossref_primary_10_1007_s10973_019_08344_z crossref_primary_10_1364_JOSAB_482646 |
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Snippet | Tm3+‐singly‐doped and Tm3+‐/Ho3+‐codoped TeO2‐Bi2O3‐ZnO‐Li2O‐Nb2O5 (TBZLN) tellurite glasses were successfully prepared by the melt‐quenching technique.... Abstract Tm 3+ ‐singly‐doped and Tm 3+ ‐/Ho 3+ ‐codoped TeO 2 ‐Bi 2 O 3 ‐ZnO‐Li 2 O‐Nb 2 O 5 ( TBZLN ) tellurite glasses were successfully prepared by the... |
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SubjectTerms | Amplification Amplifiers Broadband Cross-sections Emission analysis Energy transfer Excitation Lasers Near infrared radiation optical properties photoluminescence Quenching Solid state lasers Stimulated emission telluride Zinc oxide |
Title | Doped tellurite glasses: Extending near‐infrared emission for near‐2.0‐μm amplifiers |
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