Growth and fabrication of a mid-wavelength infrared focal plane array based on type-II InAs/GaSb superlattices

• Published in: Journal of semiconductors Vol. 34; no. 11; pp. 74 - 78
• Main Author: 王国伟 向伟 徐应强 张亮 彭振宇 吕衍秋 司俊杰 王娟 邢军亮 任正伟 牛智川
• Format: Journal Article
• Language: English
• Published: 01.11.2013
• Subjects: Arrays; Detectors; Devices; Focal plane; GaSb; InAs; Indium arsenides; Infrared; Semiconductors; Superlattices; X射线衍射; 分子束外延生长; 制造; 应变层超晶格; 截止波长; 红外焦平面阵列

We present the fabrication of a mid-wavelength infrared focal plane array （FPA） based on type-II InAs/GaSb strain layer superlattices （SLs）. The detectors contain a 400-period 8 ML InAs/8 ML GaSb SL active layer, which is grown by solid source molecular beam epitaxy on GaSb （100） N type substrates....