Growth and fabrication of a mid-wavelength infrared focal plane array based on type-II InAs/GaSb superlattices

We present the fabrication of a mid-wavelength infrared focal plane array （FPA） based on type-II InAs/GaSb strain layer superlattices （SLs）. The detectors contain a 400-period 8 ML InAs/8 ML GaSb SL active layer, which is grown by solid source molecular beam epitaxy on GaSb （100） N type substrates....

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Published inJournal of semiconductors Vol. 34; no. 11; pp. 74 - 78
Main Author 王国伟 向伟 徐应强 张亮 彭振宇 吕衍秋 司俊杰 王娟 邢军亮 任正伟 牛智川
Format Journal Article
LanguageEnglish
Published 01.11.2013
Subjects
Arrays
Detectors
Devices
Focal plane
GaSb
InAs
Indium arsenides
Infrared
Semiconductors
Superlattices
X射线衍射
分子束外延生长
制造
应变层超晶格
截止波长
红外焦平面阵列
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Summary:We present the fabrication of a mid-wavelength infrared focal plane array （FPA） based on type-II InAs/GaSb strain layer superlattices （SLs）. The detectors contain a 400-period 8 ML InAs/8 ML GaSb SL active layer, which is grown by solid source molecular beam epitaxy on GaSb （100） N type substrates. Lattice mismatch between the superlattices and GaSb substrate achieves 148.9 ppm. The full width at half maximum of the first or- der satellite peak from X-ray diffraction was 28 arcsec. Single element detectors and FPA with a 128 x 128 pixels were fabricated using citric acid based solution wet chemical etching. Chemical and physical passivation effectively reduces the surface leakage and this process was characterized by I-V measurement. The devices showed a 50% cut-off wavelength of 4.73 μm at 77 K. The photodiode exhibited an RoA of 103 f2. cm2. The FPA was characterized with an integration time of 0.5 ms and F/2.0 optics at 77 K and the average blackbody detectivity of the detectors is 2.01 × 10^9 cm.Hz^1/2/W.
Bibliography:superlattices; GaSb; focal plane array; infrared detector
Wang Guowei, Xiang Wei, Xu Yingqiang, Zhang Liang, Peng Zhenyu, Lv Yanqiu, Si Junjie, Wang Juan, Xing Junliang, Ren Zhengwei,Niu Zhichuan（1 State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China 2 Luoyang Optical Electronics Development Center, Luoyang 471009, China）
We present the fabrication of a mid-wavelength infrared focal plane array （FPA） based on type-II InAs/GaSb strain layer superlattices （SLs）. The detectors contain a 400-period 8 ML InAs/8 ML GaSb SL active layer, which is grown by solid source molecular beam epitaxy on GaSb （100） N type substrates. Lattice mismatch between the superlattices and GaSb substrate achieves 148.9 ppm. The full width at half maximum of the first or- der satellite peak from X-ray diffraction was 28 arcsec. Single element detectors and FPA with a 128 x 128 pixels were fabricated using citric acid based solution wet chemical etching. Chemical and physical passivation effectively reduces the surface leakage and this process was characterized by I-V measurement. The devices showed a 50% cut-off wavelength of 4.73 μm at 77 K. The photodiode exhibited an RoA of 103 f2. cm2. The FPA was characterized with an integration time of 0.5 ms and F/2.0 optics at 77 K and the average blackbody detectivity of the detectors is 2.01 × 10^9 cm.Hz^1/2/W.
11-5781/TN
ObjectType-Article-1
SourceType-Scholarly Journals-1
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content type line 23
ISSN:1674-4926
DOI:10.1088/1674-4926/34/11/114012