Photo-Induced Stress Relaxation in Amorphous Selenium Films
Photo-induced stress relaxation was measured in amorphous selenium (a-Se) films with an a-Se/mica bimetallic structure. Thermally-induced stresses in these a-Se films were rapidly relaxed by illumination at temperatures from -50°C to room temperature. The photo-induced stress relaxation was approxim...
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| Published in | Japanese Journal of Applied Physics Vol. 21; no. 3R; p. 424 |
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| Main Authors | , |
| Format | Journal Article |
| Language | English |
| Published |
01.03.1982
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| Online Access | Get full text |
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| Summary: | Photo-induced stress relaxation was measured in amorphous selenium (a-Se) films with an a-Se/mica bimetallic structure. Thermally-induced stresses in these a-Se films were rapidly relaxed by illumination at temperatures from -50°C to room temperature. The photo-induced stress relaxation was approximated by an exponential decay at various levels of light intensity, and the activation energy of the photo-induced stress relaxation is estimated to be of the order of 0.1 eV. This can be explained in terms of the structural relaxation in local atomic rearrangements caused by illumination. |
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| ISSN: | 0021-4922 1347-4065 |
| DOI: | 10.1143/JJAP.21.424 |