80-110-GHz Broadband Linear PA With 33% Peak PAE and Comparison of Stacked Common Base and Common Emitter PA in InP

• Published in: IEEE microwave and wireless components letters Vol. 31; no. 6; pp. 756 - 759
• Main Authors: Liu, Zheng, Sharma, Tushar, Sengupta, Kaushik
• Format: Journal Article
• Language: English
• Published: IEEE 01.06.2021
• Subjects: Broadband; common base (CB); Gain; Heterojunction bipolar transistors; high efficiency; III-V semiconductor materials; Impedance matching; Indium phosphide; InP; Linearity; millimeter-wave; stacked power amplifier; Topology; W-band

This work presents a high efficiency, compact 80-110-GHz InP power amplifier (PA) based on stacked common base (CB) topology and a counterpart design using conventional stacked common emitter (CE) topology. The comparison between the two exhibits that the former delivers higher power gain, superior-...