Impact of channel engineering (Si1-0.25Ge0.25) technique on GM(transconductance) and its higher order derivatives of 3D conventional and wavy Junctionless FinFETs (JLT)
The paper explores the analog analysis and higher order derivatives of drain current (ID) at gate source voltage (VGS), by introducing channel engineering technique of 3D conventional and Wavy Junctionless FinFETs (JLT) as silicon germanium (Si1-0.25Ge0.25) device layer. In view of this, the perform...
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Published in | Facta universitatis. Series Electronics and energetics Vol. 31; no. 2; pp. 257 - 265 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
01.06.2018
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Online Access | Get full text |
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Summary: | The paper explores the analog analysis and higher order derivatives of drain
current (ID) at gate source voltage (VGS), by introducing channel
engineering technique of 3D conventional and Wavy Junctionless FinFETs (JLT)
as silicon germanium (Si1-0.25Ge0.25) device layer. In view of this, the
performances are carried out for different gate length (LG) values (15-30
nm) and current characteristics determined by maintaining constant ON
current (ION 10-5) (A/?m) for both devices. With respect to this, a
comparison has been made between these MOS structures at molefraction x =
0.25 and it was found that the electric field is perpendicular to the
current flow which induces volume inversion approach. Accordingly, for the
simulation study better channel controllability over the gate is observed
for Wavy structures and high ID induces as the LG scales down. With respect
to this the constant ION determine ID, transconductance (gm),
transconductance generation factor (TGF) and its higher order terms (g\m,
and g\\m) of the devices are studied with relaxed SiGe approximation. The
extensive simulation study on short channel (SC) parameters are also
performed and it is observed that the Wavy JL FinFET shows less sensitivity
towards short channel effects (SCEs) over conventional one, therefore the
dependency of N-type doping concentration (ND = 1.7x1019 cm-3) and metal
workfunction (?M = 4.6 eV) are responsible to achieving reduced SCEs.
nema |
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ISSN: | 0353-3670 2217-5997 |
DOI: | 10.2298/FUEE1802257V |