Nonuniformity in the spatial distribution of negative luminescence in InAsSb(P) photodiodes (long-wavelength cutoff λ0.1 = 5.2 μm)

• Published in: Semiconductors (Woodbury, N.Y.) Vol. 46; no. 2; pp. 247 - 250
• Main Authors: Karandashev, S. A., Matveev, B. A., Mzhelskii, I. V., Polovinkin, V. G., Remennyi, M. A., Rybal’chenko, A. Yu, Stus’, N. M.
• Format: Journal Article
• Language: English
• Published: Dordrecht SP MAIK Nauka/Interperiodica 01.02.2012
• Subjects: Magnetic Materials; Magnetism; Physics; Physics and Astronomy; Physics of Semiconductor Devices; Current Crowding; Incline Wall; Mesa Surface; AuZn; Spatial Nonuniformity

The spatial nonuniformity of negative luminescence and current crowding in InAsSb(P) mid-IR photodiodes is analyzed in relation to the applied voltage and contact size values. It is shown that this non-uniformity is one of the main causes of the poor sensitivity of photodiodes which have low dynamic...