APA (7th ed.) Citation

Maslougkas, S., Domeij, M., Justice, J., Das, H., Pham, T. T., Kochoska, S., . . . Sunkari, S. (2024). Body Diode Reliability of 4H-SiC MOSFETs as a Function of Epitaxial Process Parameter. Diffusion and defect data. Solid state data. Pt. A, Defect and diffusion forum, 434, 7-13. https://doi.org/10.4028/p-wwb6HV

Chicago Style (17th ed.) Citation

Maslougkas, Sotirios, Martin Domeij, Joshua Justice, Hrishikesh Das, Thanh Toan Pham, Sara Kochoska, Jimmy Franchi, and Swapna Sunkari. "Body Diode Reliability of 4H-SiC MOSFETs as a Function of Epitaxial Process Parameter." Diffusion and Defect Data. Solid State Data. Pt. A, Defect and Diffusion Forum 434 (2024): 7-13. https://doi.org/10.4028/p-wwb6HV.

MLA (9th ed.) Citation

Maslougkas, Sotirios, et al. "Body Diode Reliability of 4H-SiC MOSFETs as a Function of Epitaxial Process Parameter." Diffusion and Defect Data. Solid State Data. Pt. A, Defect and Diffusion Forum, vol. 434, 2024, pp. 7-13, https://doi.org/10.4028/p-wwb6HV.