APA (7th ed.) Citation

Jeon, G., Kim, J., Whang, C., Im, S., Song, J., Song, J., . . . Kim, H. (2003). Formation and characterizations of ultra-shallow p+–n junctions using B10H14 ion implantation. Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 206, 409-412. https://doi.org/10.1016/S0168-583X(03)00774-2

Chicago Style (17th ed.) Citation

Jeon, G.Y, J.S Kim, C.N Whang, S. Im, J.-H Song, J.H Song, W.K Choi, and H.K Kim. "Formation and Characterizations of Ultra-shallow P+–n Junctions Using B10H14 Ion Implantation." Nuclear Instruments & Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms 206 (2003): 409-412. https://doi.org/10.1016/S0168-583X(03)00774-2.

MLA (9th ed.) Citation

Jeon, G.Y, et al. "Formation and Characterizations of Ultra-shallow P+–n Junctions Using B10H14 Ion Implantation." Nuclear Instruments & Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms, vol. 206, 2003, pp. 409-412, https://doi.org/10.1016/S0168-583X(03)00774-2.