First-principles identification of V I  + Cu i defect cluster in cuprous iodide: origin of red light photoluminescence

• Published in: Nanotechnology Vol. 33; no. 19; p. 195203
• Main Authors: Liu, Dingrong, Cai, Zenghua, Wu, Yu-Ning, Chen, Shiyou
• Format: Journal Article
• Language: English
• Published: England 07.05.2022
• Subjects: transparent semiconductor; carrier density; photoluminescence; defect cluster; first-principles calculation; cuprous iodide

The -phase cuprous iodide (CuI) emerges as a promising transparent p-type semiconductor for next-generation display technology because of its wide direct band gap, intrinsic p-type conductivity, and high carrier mobility. Two main peaks are observed in its photoluminescence (PL). One is short wavele...