APA (7th ed.) Citation

Kim, H., Lee, W., & Park, H. (2022). Extension of DRAM Retention Time at 77 Kelvin by Replacing Weak Rows with Large GIDL Current. Journal of semiconductor technology and science, 22(3), 133-138. https://doi.org/10.5573/JSTS.2022.22.3.133

Chicago Style (17th ed.) Citation

Kim, Ho-Jun, Won-Cheol Lee, and Hong-June Park. "Extension of DRAM Retention Time at 77 Kelvin by Replacing Weak Rows with Large GIDL Current." Journal of Semiconductor Technology and Science 22, no. 3 (2022): 133-138. https://doi.org/10.5573/JSTS.2022.22.3.133.

MLA (9th ed.) Citation

Kim, Ho-Jun, et al. "Extension of DRAM Retention Time at 77 Kelvin by Replacing Weak Rows with Large GIDL Current." Journal of Semiconductor Technology and Science, vol. 22, no. 3, 2022, pp. 133-138, https://doi.org/10.5573/JSTS.2022.22.3.133.