Realizing the giant seebeck coefficient and electrical conductivity in SnTe thin films by grain engineering
In this work, we have modulated the film growth parameter (post growth annealing) of SnTe-based thin films to enhance the charge carrier transport by controlling the morphology and microstructure. The samples under investigation were prepared by a vacuum tube furnace on a glass substrate using follo...
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| Published in | Ceramics international Vol. 50; no. 18; pp. 33979 - 33983 |
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| Main Authors | , , , , , , , , , , , |
| Format | Journal Article |
| Language | English |
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Elsevier Ltd
15.09.2024
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| Abstract | In this work, we have modulated the film growth parameter (post growth annealing) of SnTe-based thin films to enhance the charge carrier transport by controlling the morphology and microstructure. The samples under investigation were prepared by a vacuum tube furnace on a glass substrate using following growth conditions; growth temperature 700 °C, pressure in the tube 180 mTorr, source to substrate distance 7 cm. Grain engineering was performed by annealing the samples at different temperatures (200–500 °C) which was used as a powerful tool to enhance the mobility of charge carriers (7–13 cm2/V-Sec). SEM images demonstrated that a representative sample annealed at 300 °C has a layered structure, therefore the carriers in this sample possessed the highest value of mobility. This encouraging value of carrier mobility resulted in the enhancement of the Seebeck coefficient (7600 μV/K) and electrical conductivity (5S/cm) simultaneously. XRD and Raman spectroscopy measurements were also performed to crystal structure and vibrational modes of annealed SnTe thin films. In conclusion, it is reported that the annealing temperature of 300 °C is supposed to be the optimal value for required grain engineering in order to realize the highest value of the Seebeck coefficient and electrical conductivity. |
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| AbstractList | In this work, we have modulated the film growth parameter (post growth annealing) of SnTe-based thin films to enhance the charge carrier transport by controlling the morphology and microstructure. The samples under investigation were prepared by a vacuum tube furnace on a glass substrate using following growth conditions; growth temperature 700 °C, pressure in the tube 180 mTorr, source to substrate distance 7 cm. Grain engineering was performed by annealing the samples at different temperatures (200–500 °C) which was used as a powerful tool to enhance the mobility of charge carriers (7–13 cm2/V-Sec). SEM images demonstrated that a representative sample annealed at 300 °C has a layered structure, therefore the carriers in this sample possessed the highest value of mobility. This encouraging value of carrier mobility resulted in the enhancement of the Seebeck coefficient (7600 μV/K) and electrical conductivity (5S/cm) simultaneously. XRD and Raman spectroscopy measurements were also performed to crystal structure and vibrational modes of annealed SnTe thin films. In conclusion, it is reported that the annealing temperature of 300 °C is supposed to be the optimal value for required grain engineering in order to realize the highest value of the Seebeck coefficient and electrical conductivity. |
| Author | Ali, A. Ilyas, S.Z. Fareed, F. Tahir, M. Bilal Javaid, K. Ayari-Akkari, Amel Ikram, S. Basha, Beriham Khalil, Adnan Mahmood, K. Ali, M. Yasir Al-Buriahi, M.S. |
| Author_xml | – sequence: 1 givenname: F. surname: Fareed fullname: Fareed, F. organization: Institute of Physics, Khawaja Fareed University of Engineering and Information Technology, Rahim Yar Khan, Pakistan – sequence: 2 givenname: Beriham surname: Basha fullname: Basha, Beriham organization: Department of Physics, College of Sciences, Princess Nourah bint Abdulrahman University, P.O. Box 84428, Riyadh, 11671, Saudi Arabia – sequence: 3 givenname: M. Bilal surname: Tahir fullname: Tahir, M. Bilal organization: Institute of Physics, Khawaja Fareed University of Engineering and Information Technology, Rahim Yar Khan, Pakistan – sequence: 4 givenname: Adnan surname: Khalil fullname: Khalil, Adnan organization: Institute of Physics, Khawaja Fareed University of Engineering and Information Technology, Rahim Yar Khan, Pakistan – sequence: 5 givenname: K. orcidid: 0000-0002-4219-3192 surname: Mahmood fullname: Mahmood, K. organization: Department of Physics, Government College University Faisalabad, Pakistan – sequence: 6 givenname: A. surname: Ali fullname: Ali, A. email: adnnan_1982@yahoo.com organization: Department of Physics, Government College University Faisalabad, Pakistan – sequence: 7 givenname: M. Yasir surname: Ali fullname: Ali, M. Yasir organization: Department of Physics, Government College University Faisalabad, Pakistan – sequence: 8 givenname: Amel surname: Ayari-Akkari fullname: Ayari-Akkari, Amel organization: Biology Department, College of Sciences in Abha, King Khalid University, P.O. Box 960, Abha, Saudi Arabia – sequence: 9 givenname: M.S. surname: Al-Buriahi fullname: Al-Buriahi, M.S. organization: Department of Physics, Sakarya University, Sakarya, Turkey – sequence: 10 givenname: S.Z. surname: Ilyas fullname: Ilyas, S.Z. organization: Department of Physics, Allama Iqbal Open University Islamabad, Pakistan – sequence: 11 givenname: K. surname: Javaid fullname: Javaid, K. organization: Department of Physics, Government College University Faisalabad, Pakistan – sequence: 12 givenname: S. surname: Ikram fullname: Ikram, S. organization: Department of Physics, Government College University Faisalabad, Pakistan |
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| Keywords | Seebeck coefficient Grain engineering SnTe thin films Vacuum tube furnace |
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| SubjectTerms | Grain engineering Seebeck coefficient SnTe thin films Vacuum tube furnace |
| Title | Realizing the giant seebeck coefficient and electrical conductivity in SnTe thin films by grain engineering |
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