Single-Layer InGeS: Robust direct Bandgap, super high electron Mobility, long-lived Carriers, and Ohmic contact for Next-Generation Field-Effect transistors

• Published in: Chemical physics Vol. 586; p. 112409
• Main Authors: Cheng, Jie, Zhang, Chao, Bao, Jia-Yu, Yuan, Wen-Bo, Xie, Yong-Sheng, Long, Zhi, Song, Wen-Hao, Lei, Guo-Ping, Yang, Chun-Ming, Wei, Yong, Wang, Shi-Fa, Hu, Lei
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.10.2024
• Subjects: 2D Materials; Carrier Mobility; Field-effect Transistor; First-Principles; InGeS; First-Principles; Field-effect Transistor; Carrier Mobility; 2D Materials; InGeS

•Single-layer InGeS possesses a robust direct moderate bandgap, which is quite favorable for the field effect transistor application.•The electronic structure demonstrates the high separation efficiency of charge carriers in single-layer InGeS.•The predicted electron carrier mobility (∼11100 cm2•V−1...