(Invited) Spin-based MOSFET and Its Applications

• Published in: ECS transactions Vol. 37; no. 1; pp. 217 - 228
• Main Author: Saito, Yoshiaki
• Format: Journal Article
• Language: English
• Published: 01.01.2011
• ISSN: 1938-5862; 1938-6737
• DOI: 10.1149/1.3600742

We developed a novel spintronic device "Spin-transfer-Torque Switching-MOSFET (STS-MOSFET)" which offers non-volatile memory and transistor functions that are CMOS compatible and have high endurance and a fast write time. STS-MOSFETs with Heusler alloy (Co2FeAl0.5Si0.5) were prepared and reconfigurability of the novel spintronics-based STS-MOSFET was successfully realized in the transport properties. The device showed clear magnetocurrent (MC) and write characteristics with the endurance of over 105 cycles. Moreover, the area and speed of million-gate spin FPGAs are numerically benchmarked with CMOS FPGA for 22, 32, and 45 nm technologies including a 20% transistor size variation. We showed that the performance of spin field programmable gate array (FPGA) becomes superior to that of conventional CMOS FPGA as transistor size decreases and MC ratio increases. The overall properties of the STS-MOSFETs show great potentialities for future reconfigurable integrated circuits based on CMOS technology.