Experimental evaluation of indium( i ) iodide as a lead-free perovskite-inspired material for photovoltaic applications
The recent discovery of the photovoltaic (PV) effect in indium( i ) iodide thin films has attracted considerable attention, as this material can be a feasible environment-friendly alternative to the conventional lead halide perovskites. Previously published computational and spectroscopy data sugges...
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Published in | Journal of materials chemistry. C, Materials for optical and electronic devices Vol. 10; no. 9; pp. 3435 - 3439 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
Cambridge
Royal Society of Chemistry
03.03.2022
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Abstract | The recent discovery of the photovoltaic (PV) effect in indium(
i
) iodide thin films has attracted considerable attention, as this material can be a feasible environment-friendly alternative to the conventional lead halide perovskites. Previously published computational and spectroscopy data suggested that In I could deliver photovoltaic performances comparable to complex lead iodides; this prediction, however, was not supported by a recent experimental study. To address this contradiction, herein we evaluated systematically the potential of In I as a semiconductor material for photovoltaic applications. The solar cells assembled with In I as a light absorber material demonstrated modest power conversion efficiency of 1%. However, the lateral two-terminal devices showed a rather outstanding photoconductivity effect, which we utilized to fabricate photodetectors demonstrating a competitive performance: photodetectivity approaching 1.4 × 10
3
, specific detectivity of 5.0 × 10
11
Jones, and maximum pulse frequency of 93.6 kHz. Similar devices assembled in the vertical geometry delivered much inferior performance. GIWAXS analysis revealed that In I films are strongly textured and grow with the crystallographic
b
-axis oriented perpendicular to the substrate, which means that the layers composed of interconnected In and I atoms are lying parallel to the substrate. The estimated effective charge carrier lifetimes in lateral and vertical devices (2 ms and 15 ms, respectively) confirmed that their strikingly different performances are due to the structural and electronic anisotropy of In I films. The obtained results reveal the importance of the structural dimensionality of the newly designed semiconductor materials: truly 3D structures are required to match complex lead halides in terms of their optoelectronic properties. On the contrary, materials with lower dimensionality, such as 2D In I, could provide excellent performance in lateral photodetector devices, whereas their efficient use in vertical geometry cells would require changing the preferential film growth direction, which is a solvable but a very nontrivial task. |
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AbstractList | The recent discovery of the photovoltaic (PV) effect in indium(i) iodide thin films has attracted considerable attention, as this material can be a feasible environment-friendly alternative to the conventional lead halide perovskites. Previously published computational and spectroscopy data suggested that In I could deliver photovoltaic performances comparable to complex lead iodides; this prediction, however, was not supported by a recent experimental study. To address this contradiction, herein we evaluated systematically the potential of In I as a semiconductor material for photovoltaic applications. The solar cells assembled with In I as a light absorber material demonstrated modest power conversion efficiency of 1%. However, the lateral two-terminal devices showed a rather outstanding photoconductivity effect, which we utilized to fabricate photodetectors demonstrating a competitive performance: photodetectivity approaching 1.4 × 103, specific detectivity of 5.0 × 1011 Jones, and maximum pulse frequency of 93.6 kHz. Similar devices assembled in the vertical geometry delivered much inferior performance. GIWAXS analysis revealed that In I films are strongly textured and grow with the crystallographic b-axis oriented perpendicular to the substrate, which means that the layers composed of interconnected In and I atoms are lying parallel to the substrate. The estimated effective charge carrier lifetimes in lateral and vertical devices (2 ms and 15 ms, respectively) confirmed that their strikingly different performances are due to the structural and electronic anisotropy of In I films. The obtained results reveal the importance of the structural dimensionality of the newly designed semiconductor materials: truly 3D structures are required to match complex lead halides in terms of their optoelectronic properties. On the contrary, materials with lower dimensionality, such as 2D In I, could provide excellent performance in lateral photodetector devices, whereas their efficient use in vertical geometry cells would require changing the preferential film growth direction, which is a solvable but a very nontrivial task. The recent discovery of the photovoltaic (PV) effect in indium( i ) iodide thin films has attracted considerable attention, as this material can be a feasible environment-friendly alternative to the conventional lead halide perovskites. Previously published computational and spectroscopy data suggested that In I could deliver photovoltaic performances comparable to complex lead iodides; this prediction, however, was not supported by a recent experimental study. To address this contradiction, herein we evaluated systematically the potential of In I as a semiconductor material for photovoltaic applications. The solar cells assembled with In I as a light absorber material demonstrated modest power conversion efficiency of 1%. However, the lateral two-terminal devices showed a rather outstanding photoconductivity effect, which we utilized to fabricate photodetectors demonstrating a competitive performance: photodetectivity approaching 1.4 × 10 3 , specific detectivity of 5.0 × 10 11 Jones, and maximum pulse frequency of 93.6 kHz. Similar devices assembled in the vertical geometry delivered much inferior performance. GIWAXS analysis revealed that In I films are strongly textured and grow with the crystallographic b -axis oriented perpendicular to the substrate, which means that the layers composed of interconnected In and I atoms are lying parallel to the substrate. The estimated effective charge carrier lifetimes in lateral and vertical devices (2 ms and 15 ms, respectively) confirmed that their strikingly different performances are due to the structural and electronic anisotropy of In I films. The obtained results reveal the importance of the structural dimensionality of the newly designed semiconductor materials: truly 3D structures are required to match complex lead halides in terms of their optoelectronic properties. On the contrary, materials with lower dimensionality, such as 2D In I, could provide excellent performance in lateral photodetector devices, whereas their efficient use in vertical geometry cells would require changing the preferential film growth direction, which is a solvable but a very nontrivial task. |
Author | Ustinova, Marina I. Olthof, Selina Babenko, Sergey D. Troshin, Pavel A. Talalaev, Filipp S. Luchkin, Sergey Yu Anokhin, Denis V. |
Author_xml | – sequence: 1 givenname: Marina I. orcidid: 0000-0002-6726-2457 surname: Ustinova fullname: Ustinova, Marina I. organization: Institute for Problems of Chemical Physics of RAS (IPCP RAS), Academician Semenov Avenue 1, Chernogolovka, 142432, Russia – sequence: 2 givenname: Sergey D. surname: Babenko fullname: Babenko, Sergey D. organization: Chernogoloka branch of the N.N. Semenov Federal Research Center for Chemical Physics of RAS, Academician Semenov St. 1/10, Chernogolovka, 142432, Russia – sequence: 3 givenname: Sergey Yu surname: Luchkin fullname: Luchkin, Sergey Yu organization: Skolkovo Institute of Science and Technology, Nobel St. 3, Moscow, 121205, Russia – sequence: 4 givenname: Filipp S. surname: Talalaev fullname: Talalaev, Filipp S. organization: Institute for Problems of Chemical Physics of RAS (IPCP RAS), Academician Semenov Avenue 1, Chernogolovka, 142432, Russia – sequence: 5 givenname: Denis V. orcidid: 0000-0002-5997-2133 surname: Anokhin fullname: Anokhin, Denis V. organization: Institute for Problems of Chemical Physics of RAS (IPCP RAS), Academician Semenov Avenue 1, Chernogolovka, 142432, Russia, Lomonosov Moscow State University, 1 Leninskie Gory, Moscow, 119991, Russia – sequence: 6 givenname: Selina surname: Olthof fullname: Olthof, Selina organization: Department Chemie, Universität zu Köln, Greinstrasse 4-6, Köln, 50939, Germany – sequence: 7 givenname: Pavel A. orcidid: 0000-0001-9957-4140 surname: Troshin fullname: Troshin, Pavel A. organization: Institute for Problems of Chemical Physics of RAS (IPCP RAS), Academician Semenov Avenue 1, Chernogolovka, 142432, Russia, Faculty of Chemistry, Silesian University of Technology, Strzody 9, 44-100 Gliwice, Poland |
BookMark | eNpFkFFLwzAQx4MoOOde_AQBX1SoJmmTNo8yNxUGvsznck1SzOyamqRTv73Rid7L3R_ufge_E3TYu94gdEbJNSW5vLmj6znhvMqXB2jCCCdZyfPi8G9m4hjNQtiQVBUVlZAT9L74GIy3W9NH6LDZQTdCtK7HrsW213bcXmCLL7F12mqDIWDAnQGdtd4YnE7dLrzaaDLbh8F6o_EWYgImWOs8Hl5cdDvXRbAKwzB0Vv3gwyk6aqELZvbbp-h5uVjPH7LV0_3j_HaVKVrJmHEhq0a2AKAVlYQxAFEoJgvGNWFKANE5bYhWDS9US6lpylJCUaYoCl3JfIrO99zBu7fRhFhv3Oj79LJmIudUljS5m6Kr_ZbyLgRv2npITsB_1pTU327rf7f5F2K3bsM |
CitedBy_id | crossref_primary_10_1016_j_heliyon_2024_e23985 crossref_primary_10_1007_s10765_023_03161_x crossref_primary_10_3390_nano13091524 |
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ContentType | Journal Article |
Copyright | Copyright Royal Society of Chemistry 2022 |
Copyright_xml | – notice: Copyright Royal Society of Chemistry 2022 |
DBID | AAYXX CITATION 7SP 7U5 8FD L7M |
DOI | 10.1039/D1TC05583F |
DatabaseName | CrossRef Electronics & Communications Abstracts Solid State and Superconductivity Abstracts Technology Research Database Advanced Technologies Database with Aerospace |
DatabaseTitle | CrossRef Solid State and Superconductivity Abstracts Technology Research Database Advanced Technologies Database with Aerospace Electronics & Communications Abstracts |
DatabaseTitleList | Solid State and Superconductivity Abstracts CrossRef |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Engineering Physics |
EISSN | 2050-7534 |
EndPage | 3439 |
ExternalDocumentID | 10_1039_D1TC05583F |
GroupedDBID | -JG 0-7 0R~ 4.4 705 AAEMU AAIWI AAJAE AANOJ AAWGC AAXHV AAYXX ABASK ABDVN ABEMK ABJNI ABPDG ABRYZ ABXOH ACGFS ACLDK ADMRA ADSRN AEFDR AENEX AENGV AESAV AETIL AFLYV AFOGI AFRDS AFVBQ AGEGJ AGRSR AGSTE AHGCF ALMA_UNASSIGNED_HOLDINGS ANUXI APEMP ASKNT AUDPV BLAPV BSQNT C6K CITATION EBS ECGLT EE0 EF- GGIMP GNO H13 HZ~ H~N J3I O-G O9- R7C RAOCF RCNCU RNS RPMJG RRC RSCEA SKA SKF SLH UCJ 7SP 7U5 8FD L7M |
ID | FETCH-LOGICAL-c189t-5698b9faaadc19022aa64c29425d02c6a0d31b0dcb54cf11eb779a47b5464d893 |
ISSN | 2050-7526 |
IngestDate | Thu Oct 10 18:37:39 EDT 2024 Fri Aug 23 00:40:06 EDT 2024 |
IsPeerReviewed | true |
IsScholarly | true |
Issue | 9 |
Language | English |
LinkModel | OpenURL |
MergedId | FETCHMERGED-LOGICAL-c189t-5698b9faaadc19022aa64c29425d02c6a0d31b0dcb54cf11eb779a47b5464d893 |
ORCID | 0000-0001-9957-4140 0000-0002-5997-2133 0000-0002-6726-2457 |
PQID | 2635197110 |
PQPubID | 2047521 |
PageCount | 5 |
ParticipantIDs | proquest_journals_2635197110 crossref_primary_10_1039_D1TC05583F |
PublicationCentury | 2000 |
PublicationDate | 2022-03-03 |
PublicationDateYYYYMMDD | 2022-03-03 |
PublicationDate_xml | – month: 03 year: 2022 text: 2022-03-03 day: 03 |
PublicationDecade | 2020 |
PublicationPlace | Cambridge |
PublicationPlace_xml | – name: Cambridge |
PublicationTitle | Journal of materials chemistry. C, Materials for optical and electronic devices |
PublicationYear | 2022 |
Publisher | Royal Society of Chemistry |
Publisher_xml | – name: Royal Society of Chemistry |
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SSID | ssj0000816869 |
Score | 2.258415 |
Snippet | The recent discovery of the photovoltaic (PV) effect in indium(
i
) iodide thin films has attracted considerable attention, as this material can be a feasible... The recent discovery of the photovoltaic (PV) effect in indium(i) iodide thin films has attracted considerable attention, as this material can be a feasible... |
SourceID | proquest crossref |
SourceType | Aggregation Database |
StartPage | 3435 |
SubjectTerms | Anisotropy Crystallography Current carriers Devices Energy conversion efficiency Film growth Halides Indium Iodides Lead compounds Lead free Metal halides Optoelectronics Perovskites Photoconductivity Photometers Photovoltaic cells Semiconductor materials Solar cells Substrates Thin films |
Title | Experimental evaluation of indium( i ) iodide as a lead-free perovskite-inspired material for photovoltaic applications |
URI | https://www.proquest.com/docview/2635197110 |
Volume | 10 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV1bi9NAFB5qF0EfRFdld11lQB-UkjW3STKPa21Zpa4PplCfwplL2LCSlG26oD_ZX-GZ3AtVVAqhM6FDMufrmS8nZ75DyCstAxsiR1sQysjyPdAWD6RjqSDVNrggA2E2OH-6DC6W_scVW41GPwdZS9tSnMkfe_eV_I9VsQ_tanbJ_oNlu0GxA7-jffGIFsbjX9l4NpTn73W7axkIlZkSxlFmnvuzQmVKm5oyYOpEKCu90dpIFhe3GxO-tbLcvHFH8okEtrryKv1wfVWUBfqvEoyq6-BV928obfvjzUS2deTOJtN6S1B7xoxbrMtOpGBQh0fpym21GFii9zElW5stRVkOfYj3HQidX1dh3i9m_-j3ncxl0_66nSy28uo66zON4Rt-cI4NXzdhpHUT922CHvi8bLK-vA6mdWilzWut8laau-rdp2sz2wqZ2whtD_ua8Gnr_-0BzvnAmXt-raTSEANs8r2Lju0ZzVbllNJmLPLSfmlt0wkuPyfz5WKRxLNVfIccuCFnbEwOzmfxh0UXEaxKoFQ1GLtLb_V0Pf62H36XQe0SiIoVxQ_Jg8b29LzG5iMy0vkhuT8QuTwkd6skY7l5TLZDvNIer7RIaY3X19kbWmOVwoYC7bBK92CVtnCjiCk6xCodYvUJWc5n8fTCasp-WNKJeGmxgEeCpwCgJNJV1wUIfOlyXF2U7coAbOU5wlZSMF-mjqNFGHLwQ2wGvkL-_ZSM8yLXR4QGoS8UE0pwD_wAGESuLzhEoZK4uGn3mLxspzJZ1-ouSZWV4fHkvRNPqwmfH5PTdpaT5t-_SYyIk8NDZM8nfz79jNzrEXxKxuXNVj9HIluKFw0CfgFm5KnY |
link.rule.ids | 315,786,790,27955,27956 |
linkProvider | Royal Society of Chemistry |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Experimental+evaluation+of+indium%28i%29+iodide+as+a+lead-free+perovskite-inspired+material+for+photovoltaic+applications&rft.jtitle=Journal+of+materials+chemistry.+C%2C+Materials+for+optical+and+electronic+devices&rft.au=Ustinova%2C+Marina+I&rft.au=Babenko%2C+Sergey+D&rft.au=Sergey+Yu+Luchkin&rft.au=Talalaev%2C+Filipp+S&rft.date=2022-03-03&rft.pub=Royal+Society+of+Chemistry&rft.issn=2050-7526&rft.eissn=2050-7534&rft.volume=10&rft.issue=9&rft.spage=3435&rft.epage=3439&rft_id=info:doi/10.1039%2Fd1tc05583f&rft.externalDBID=NO_FULL_TEXT |
thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=2050-7526&client=summon |
thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=2050-7526&client=summon |
thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=2050-7526&client=summon |