CMP for Cu Interconnect with Advanced Barrier Materials

In this paper, we discuss CMP technology for Cu interconnects with a Co seed enhancement liner (SEL) and Cu with a Ru barrier. Typical forms of galvanic corrosion for each type of barrier are also reviewed. To meet CMP performance requirements, specific polishing and cleaning processes for each CMP...

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Bibliographic Details
Published inECS transactions Vol. 33; no. 12; pp. 147 - 155
Main Authors Wang, You, Gage, Max, Xu, Kun, Wang, Yuchun, Chen, Yufei, Xia, Sherry, Tu, Wen-chiang, Karuppiah, Lakshmanan
Format Journal Article
LanguageEnglish
Published 01.01.2010
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Summary:In this paper, we discuss CMP technology for Cu interconnects with a Co seed enhancement liner (SEL) and Cu with a Ru barrier. Typical forms of galvanic corrosion for each type of barrier are also reviewed. To meet CMP performance requirements, specific polishing and cleaning processes for each CMP step were developed. The overall performance of CMP was evaluated using a variety of patterned wafers, and results are presented.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.3501041