From GaN crystallinity to device performance: Nucleation mode vs Surface energy of single-crystalline AlN template
In this paper, the surface state of the single-crystalline AlN template's impact on the epitaxial growth of gallium nitride (GaN) was studied. Subsequently, Schottky barrier devices were fabricated and analyzed. The results indicate that surface states subjected to different treatments exhibit...
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Published in | Journal of alloys and compounds Vol. 1002; p. 175363 |
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Main Authors | , , , , , , , , , , , |
Format | Journal Article |
Language | English |
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Elsevier B.V
15.10.2024
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Abstract | In this paper, the surface state of the single-crystalline AlN template's impact on the epitaxial growth of gallium nitride (GaN) was studied. Subsequently, Schottky barrier devices were fabricated and analyzed. The results indicate that surface states subjected to different treatments exhibit varying epitaxial growth modes at the initial nucleation stage, which have a correlated effect on surface topography, crystalline quality, strain and other material characteristics of the epitaxial GaN. Higher surface energy leads to a reduction in screw dislocation of GaN material, but has less influence on edge dislocation. Single-crystalline AlN templates with higher surface energy are more likely to exhibit Stranski-Krastanow and Frank-van der Merwe growth model and achieve high-quality epitaxial materials. Schottky devices prepared using GaN material with lower screw dislocation density exhibit lower reverse leakage current. First-principles simulation analysis revealed that the migration barrier of gallium and nitrogen atoms on the surface can be overcome with the larger surface energy of single-crystalline AlN template. This facilitates their migration on the surface, resulting in higher quality material epitaxy. The conclusions of this work provide insights for quality control of epitaxial GaN materials on single-crystalline AlN templates, as well as for studying device leakage in the backend of the device fabrication process, or similar homogeneous compound semiconductor heteroepitaxy studies.
•The correlation between surface energy, epitaxy and device was established for GaN epitaxial on single-crystalline AlN.•Surface energy prefers to driving Stranski-Krastanow growth mode and reducing screw dislocation density during GaN epitaxy.•The results confirm that reverse leakage of GaN SBD is more sensitive to screw dislocation rather than edge dislocation. |
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AbstractList | In this paper, the surface state of the single-crystalline AlN template's impact on the epitaxial growth of gallium nitride (GaN) was studied. Subsequently, Schottky barrier devices were fabricated and analyzed. The results indicate that surface states subjected to different treatments exhibit varying epitaxial growth modes at the initial nucleation stage, which have a correlated effect on surface topography, crystalline quality, strain and other material characteristics of the epitaxial GaN. Higher surface energy leads to a reduction in screw dislocation of GaN material, but has less influence on edge dislocation. Single-crystalline AlN templates with higher surface energy are more likely to exhibit Stranski-Krastanow and Frank-van der Merwe growth model and achieve high-quality epitaxial materials. Schottky devices prepared using GaN material with lower screw dislocation density exhibit lower reverse leakage current. First-principles simulation analysis revealed that the migration barrier of gallium and nitrogen atoms on the surface can be overcome with the larger surface energy of single-crystalline AlN template. This facilitates their migration on the surface, resulting in higher quality material epitaxy. The conclusions of this work provide insights for quality control of epitaxial GaN materials on single-crystalline AlN templates, as well as for studying device leakage in the backend of the device fabrication process, or similar homogeneous compound semiconductor heteroepitaxy studies.
•The correlation between surface energy, epitaxy and device was established for GaN epitaxial on single-crystalline AlN.•Surface energy prefers to driving Stranski-Krastanow growth mode and reducing screw dislocation density during GaN epitaxy.•The results confirm that reverse leakage of GaN SBD is more sensitive to screw dislocation rather than edge dislocation. |
ArticleNumber | 175363 |
Author | Liu, Zenghui Feng, Wenyong Wang, Fengge Yuan, Ye Liang, Yisheng Yang, Xien Zhang, Baijun Liang, Zhiwen Li, Xiaodong Lin, Lizhang Xu, Yanyan Li, Xin |
Author_xml | – sequence: 1 givenname: Zhiwen surname: Liang fullname: Liang, Zhiwen organization: State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China – sequence: 2 givenname: Ye surname: Yuan fullname: Yuan, Ye organization: Songshan Lake Materials Laboratory, Dongguan, Guangdong, China – sequence: 3 givenname: Wenyong surname: Feng fullname: Feng, Wenyong organization: State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China – sequence: 4 givenname: Xin surname: Li fullname: Li, Xin organization: State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China – sequence: 5 givenname: Zenghui surname: Liu fullname: Liu, Zenghui organization: State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China – sequence: 6 givenname: Yisheng surname: Liang fullname: Liang, Yisheng organization: State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China – sequence: 7 givenname: Fengge surname: Wang fullname: Wang, Fengge organization: State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China – sequence: 8 givenname: Yanyan surname: Xu fullname: Xu, Yanyan organization: State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China – sequence: 9 givenname: Xien surname: Yang fullname: Yang, Xien organization: State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China – sequence: 10 givenname: Xiaodong surname: Li fullname: Li, Xiaodong organization: State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China – sequence: 11 givenname: Lizhang surname: Lin fullname: Lin, Lizhang organization: State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China – sequence: 12 givenname: Baijun surname: Zhang fullname: Zhang, Baijun email: zhbaij@mail.sysu.edu.cn organization: State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China |
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Snippet | In this paper, the surface state of the single-crystalline AlN template's impact on the epitaxial growth of gallium nitride (GaN) was studied. Subsequently,... |
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SubjectTerms | Device GaN Single-crystalline AlN Surface energy |
Title | From GaN crystallinity to device performance: Nucleation mode vs Surface energy of single-crystalline AlN template |
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