Nano Silicon Carbide’s Stacking Faults, Deep Level’s and Grain Boundary’s Defects

• Published in: Journal of Nano- and Electronic Physics Vol. 10; no. 5
• Main Authors: Vlaskina, S I, Svechnikov, G S, Mishinova, G N, Vlaskin, V I, Rodionov, V E, Lytvynenko, V V
• Format: Journal Article
• Language: English
• Published: Sumy Ukraine Sumy State University, Journal of Nano - and Electronic Physics 01.01.2018
• Subjects: Crystal defects; Crystal growth; Grain boundaries; Phase transitions; Photoluminescence; Polytypes; Silicon carbide; Spectra; Stacking faults
• DOI: 10.21272/jnep.10(5).05021
• ISSN: 2077-6772

In this work, photoluminescence spectra of SiC crystals with ingrown original defects are analised It was shown that stalking fault and deep level luminescence spectra reflect the fundamental logic of the SiC polytype structure .The analysis of the zero- phonon spectra of the stalking fault, deep level, and grain boundary parts of the photoluminescence spectra makes it possible to control the processes of phase transformations within the growth process of crystals and films, as well as during the technological operations. Moreover, it makes it possible in nanostructures of silicon carbide. to determine the position or displacement of atoms participating in the photoluminescence with an accuracy of 0.0787 Angstrom (or 1.075 meV)