Synergistically enhanced in Sm doped ZnO with multi-element for optoelectronic and spintronic applications: a first-principles GGA + U investigation

We investigate the structural stability, electronic, magnetic and optical properties of Sm-X (X = N, C, Li, Ag) co-doped ZnO by using first-principle GGA +  U calculations. The results show that the substitution-doped configuration is energetically favorable under O-rich growth conditions. Electrica...

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Published inApplied physics. A, Materials science & processing Vol. 131; no. 7
Main Authors Zhao, Yanfang, Yuan, Hao, Xiao, Yuanbin, Ding, Wei, Lv, Jian, Yang, Ping
Format Journal Article
LanguageEnglish
Published Berlin/Heidelberg Springer Berlin Heidelberg 01.07.2025
Springer Nature B.V
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Abstract We investigate the structural stability, electronic, magnetic and optical properties of Sm-X (X = N, C, Li, Ag) co-doped ZnO by using first-principle GGA +  U calculations. The results show that the substitution-doped configuration is energetically favorable under O-rich growth conditions. Electrically, all acceptor dopants (N, C, Li, Ag) introduce localized hole carriers that form hole-mediated charge transfer complexes with Sm-4f electrons, which enhance the charge transfer ability of Sm atoms compared to Sm-mono-doped ZnO. This mechanism reduces the magnetic moment of Sm through partial f-electron migration but enhances the ionic bonding in the Sm-O pair. Optically, Sm-X co-doping can redshift the absorption edge of ZnO through the mid-gap state and enhance the visible light responsivity. The co-doping strategy greatly improves the dielectric properties. Among them, Sm-Ag co-doping achieves a static dielectric constant of 37, which greatly improves the carrier lifetime and has potential applications in photocatalysis.
AbstractList We investigate the structural stability, electronic, magnetic and optical properties of Sm-X (X = N, C, Li, Ag) co-doped ZnO by using first-principle GGA + U calculations. The results show that the substitution-doped configuration is energetically favorable under O-rich growth conditions. Electrically, all acceptor dopants (N, C, Li, Ag) introduce localized hole carriers that form hole-mediated charge transfer complexes with Sm-4f electrons, which enhance the charge transfer ability of Sm atoms compared to Sm-mono-doped ZnO. This mechanism reduces the magnetic moment of Sm through partial f-electron migration but enhances the ionic bonding in the Sm-O pair. Optically, Sm-X co-doping can redshift the absorption edge of ZnO through the mid-gap state and enhance the visible light responsivity. The co-doping strategy greatly improves the dielectric properties. Among them, Sm-Ag co-doping achieves a static dielectric constant of 37, which greatly improves the carrier lifetime and has potential applications in photocatalysis.
We investigate the structural stability, electronic, magnetic and optical properties of Sm-X (X = N, C, Li, Ag) co-doped ZnO by using first-principle GGA +  U calculations. The results show that the substitution-doped configuration is energetically favorable under O-rich growth conditions. Electrically, all acceptor dopants (N, C, Li, Ag) introduce localized hole carriers that form hole-mediated charge transfer complexes with Sm-4f electrons, which enhance the charge transfer ability of Sm atoms compared to Sm-mono-doped ZnO. This mechanism reduces the magnetic moment of Sm through partial f-electron migration but enhances the ionic bonding in the Sm-O pair. Optically, Sm-X co-doping can redshift the absorption edge of ZnO through the mid-gap state and enhance the visible light responsivity. The co-doping strategy greatly improves the dielectric properties. Among them, Sm-Ag co-doping achieves a static dielectric constant of 37, which greatly improves the carrier lifetime and has potential applications in photocatalysis.
ArticleNumber 587
Author Xiao, Yuanbin
Yang, Ping
Zhao, Yanfang
Yuan, Hao
Ding, Wei
Lv, Jian
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  organization: School of Mechanical Engineering, Jiangsu University of Technology, Laboratory of Advanced Design, Manufacturing & Reliability for MEMS/NEMS/OEDS, School of Mechanical Engineering, Jiangsu University
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Snippet We investigate the structural stability, electronic, magnetic and optical properties of Sm-X (X = N, C, Li, Ag) co-doped ZnO by using first-principle GGA +  U...
We investigate the structural stability, electronic, magnetic and optical properties of Sm-X (X = N, C, Li, Ag) co-doped ZnO by using first-principle GGA + U...
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SubjectTerms Carrier lifetime
Characterization and Evaluation of Materials
Charge transfer
Condensed Matter Physics
Dielectric properties
Doping
Electrons
First principles
Machines
Magnetic moments
Magnetic properties
Manufacturing
Materials science
Nanotechnology
Optical and Electronic Materials
Optical properties
Optoelectronics
Physics
Physics and Astronomy
Processes
Red shift
Structural stability
Surfaces and Interfaces
Thin Films
Zinc oxide
Title Synergistically enhanced in Sm doped ZnO with multi-element for optoelectronic and spintronic applications: a first-principles GGA + U investigation
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Volume 131
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