Synergistically enhanced in Sm doped ZnO with multi-element for optoelectronic and spintronic applications: a first-principles GGA + U investigation
We investigate the structural stability, electronic, magnetic and optical properties of Sm-X (X = N, C, Li, Ag) co-doped ZnO by using first-principle GGA + U calculations. The results show that the substitution-doped configuration is energetically favorable under O-rich growth conditions. Electrica...
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Published in | Applied physics. A, Materials science & processing Vol. 131; no. 7 |
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Main Authors | , , , , , |
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Language | English |
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01.07.2025
Springer Nature B.V |
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Abstract | We investigate the structural stability, electronic, magnetic and optical properties of Sm-X (X = N, C, Li, Ag) co-doped ZnO by using first-principle GGA +
U
calculations. The results show that the substitution-doped configuration is energetically favorable under O-rich growth conditions. Electrically, all acceptor dopants (N, C, Li, Ag) introduce localized hole carriers that form hole-mediated charge transfer complexes with Sm-4f electrons, which enhance the charge transfer ability of Sm atoms compared to Sm-mono-doped ZnO. This mechanism reduces the magnetic moment of Sm through partial f-electron migration but enhances the ionic bonding in the Sm-O pair. Optically, Sm-X co-doping can redshift the absorption edge of ZnO through the mid-gap state and enhance the visible light responsivity. The co-doping strategy greatly improves the dielectric properties. Among them, Sm-Ag co-doping achieves a static dielectric constant of 37, which greatly improves the carrier lifetime and has potential applications in photocatalysis. |
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AbstractList | We investigate the structural stability, electronic, magnetic and optical properties of Sm-X (X = N, C, Li, Ag) co-doped ZnO by using first-principle GGA + U calculations. The results show that the substitution-doped configuration is energetically favorable under O-rich growth conditions. Electrically, all acceptor dopants (N, C, Li, Ag) introduce localized hole carriers that form hole-mediated charge transfer complexes with Sm-4f electrons, which enhance the charge transfer ability of Sm atoms compared to Sm-mono-doped ZnO. This mechanism reduces the magnetic moment of Sm through partial f-electron migration but enhances the ionic bonding in the Sm-O pair. Optically, Sm-X co-doping can redshift the absorption edge of ZnO through the mid-gap state and enhance the visible light responsivity. The co-doping strategy greatly improves the dielectric properties. Among them, Sm-Ag co-doping achieves a static dielectric constant of 37, which greatly improves the carrier lifetime and has potential applications in photocatalysis. We investigate the structural stability, electronic, magnetic and optical properties of Sm-X (X = N, C, Li, Ag) co-doped ZnO by using first-principle GGA + U calculations. The results show that the substitution-doped configuration is energetically favorable under O-rich growth conditions. Electrically, all acceptor dopants (N, C, Li, Ag) introduce localized hole carriers that form hole-mediated charge transfer complexes with Sm-4f electrons, which enhance the charge transfer ability of Sm atoms compared to Sm-mono-doped ZnO. This mechanism reduces the magnetic moment of Sm through partial f-electron migration but enhances the ionic bonding in the Sm-O pair. Optically, Sm-X co-doping can redshift the absorption edge of ZnO through the mid-gap state and enhance the visible light responsivity. The co-doping strategy greatly improves the dielectric properties. Among them, Sm-Ag co-doping achieves a static dielectric constant of 37, which greatly improves the carrier lifetime and has potential applications in photocatalysis. |
ArticleNumber | 587 |
Author | Xiao, Yuanbin Yang, Ping Zhao, Yanfang Yuan, Hao Ding, Wei Lv, Jian |
Author_xml | – sequence: 1 givenname: Yanfang surname: Zhao fullname: Zhao, Yanfang organization: School of Mechanical Engineering, Jiangsu University of Technology, Laboratory of Advanced Design, Manufacturing & Reliability for MEMS/NEMS/OEDS, School of Mechanical Engineering, Jiangsu University – sequence: 2 givenname: Hao surname: Yuan fullname: Yuan, Hao organization: School of Mechanical Engineering, Jiangsu University of Technology – sequence: 3 givenname: Yuanbin surname: Xiao fullname: Xiao, Yuanbin organization: School of Mechanical Engineering, Jiangsu University of Technology, Key Laboratory of Materials Surface Science and Technology of Jiangsu Province Higher Education Institutes (Changzhou University) – sequence: 4 givenname: Wei surname: Ding fullname: Ding, Wei organization: School of Electrical Engineering and Automation, Suzhou University of Technology – sequence: 5 givenname: Jian surname: Lv fullname: Lv, Jian organization: School of Mechanical Engineering, Jiangsu University of Technology – sequence: 6 givenname: Ping surname: Yang fullname: Yang, Ping email: yangpingdm@mail.ujs.edu.cn organization: School of Mechanical Engineering, Jiangsu University of Technology, Laboratory of Advanced Design, Manufacturing & Reliability for MEMS/NEMS/OEDS, School of Mechanical Engineering, Jiangsu University |
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Snippet | We investigate the structural stability, electronic, magnetic and optical properties of Sm-X (X = N, C, Li, Ag) co-doped ZnO by using first-principle GGA +
U... We investigate the structural stability, electronic, magnetic and optical properties of Sm-X (X = N, C, Li, Ag) co-doped ZnO by using first-principle GGA + U... |
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SubjectTerms | Carrier lifetime Characterization and Evaluation of Materials Charge transfer Condensed Matter Physics Dielectric properties Doping Electrons First principles Machines Magnetic moments Magnetic properties Manufacturing Materials science Nanotechnology Optical and Electronic Materials Optical properties Optoelectronics Physics Physics and Astronomy Processes Red shift Structural stability Surfaces and Interfaces Thin Films Zinc oxide |
Title | Synergistically enhanced in Sm doped ZnO with multi-element for optoelectronic and spintronic applications: a first-principles GGA + U investigation |
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