High field transport in strained Si/GeSi double heterostructure: A Fokker–Planck approach

We report calculations of high electric field transport for the case of a strained Si/GeSi double heterostructure (DHS) considering transport along the Si channel and by applying the analytical Fokker-Planck approach (FPA), where the process is modeled as drift diffusion in energy space. We limit ou...

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Published inJournal of applied physics Vol. 87; no. 11; pp. 7880 - 7884
Main Authors Comas, F., Studart, Nelson
Format Journal Article
LanguageEnglish
Published 01.06.2000
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Abstract We report calculations of high electric field transport for the case of a strained Si/GeSi double heterostructure (DHS) considering transport along the Si channel and by applying the analytical Fokker-Planck approach (FPA), where the process is modeled as drift diffusion in energy space. We limit ourselves to electronic transport in the conduction band of the strained Si, where an energy shift between the otherwise degenerate six energy valleys characterizes the band alignment in the DHS. Inter-valley phonon scatterings are considered while intra-valley acoustic phonon scattering is ignored, leading to results valid for high enough temperatures. Our results are compared to previous theoretical work where Monte Carlo simulations were applied. A reasonable agreement between the two approaches is obtained in the high electric field regime.
AbstractList We report calculations of high electric field transport for the case of a strained Si/GeSi double heterostructure (DHS) considering transport along the Si channel and by applying the analytical Fokker-Planck approach (FPA), where the process is modeled as drift diffusion in energy space. We limit ourselves to electronic transport in the conduction band of the strained Si, where an energy shift between the otherwise degenerate six energy valleys characterizes the band alignment in the DHS. Inter-valley phonon scatterings are considered while intra-valley acoustic phonon scattering is ignored, leading to results valid for high enough temperatures. Our results are compared to previous theoretical work where Monte Carlo simulations were applied. A reasonable agreement between the two approaches is obtained in the high electric field regime.
Author Comas, F.
Studart, Nelson
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Cites_doi 10.1103/PhysRevB.52.8092
10.1103/PhysRevB.14.1605
10.1063/1.109278
10.1103/RevModPhys.55.645
10.1103/PhysRevB.54.1799
10.1088/0268-1242/12/12/001
10.1088/0268-1242/13/7/006
10.1063/1.119259
10.1088/0268-1242/13/7/005
10.1063/1.104978
10.1063/1.365696
10.1088/0268-1242/7/2/014
10.1103/PhysRevB.47.3690
10.1143/JPSJ.20.937
10.1088/0268-1242/9/5S/101
10.1080/13642819808206397
10.1063/1.110394
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References (2024020600500885700_r4) 1991; 58
(2024020600500885700_r10a) 1998; 13
(2024020600500885700_r8) 1997; 70
(2024020600500885700_r6) 1993; 63
(2024020600500885700_r13) 1965; 20
(2024020600500885700_r16) 1998; 77
(2024020600500885700_r7) 1994; 9
(2024020600500885700_r5) 1993; 62
(2024020600500885700_r14) 1995; 52
(2024020600500885700_r3) 1992; 7
(2024020600500885700_r1) 1986; QE-22
(2024020600500885700_r10) 1998; 13
(2024020600500885700_r15) 1996; 54
(2024020600500885700_r11) 1993; 47
(2024020600500885700_r2) 1997; 12
(2024020600500885700_r18) 1983; 55
2024020600500885700_r17
(2024020600500885700_r19) 1976; 14
(2024020600500885700_r12) 1965; 6
(2024020600500885700_r9) 1997; 82
References_xml – volume: 52
  start-page: 8092
  year: 1995
  ident: 2024020600500885700_r14
  publication-title: Phys. Rev. B
  doi: 10.1103/PhysRevB.52.8092
– volume: 14
  start-page: 1605
  year: 1976
  ident: 2024020600500885700_r19
  publication-title: Phys. Rev. B
  doi: 10.1103/PhysRevB.14.1605
– volume: 62
  start-page: 2661
  year: 1993
  ident: 2024020600500885700_r5
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.109278
– volume: 55
  start-page: 645
  year: 1983
  ident: 2024020600500885700_r18
  publication-title: Rev. Mod. Phys.
  doi: 10.1103/RevModPhys.55.645
– volume: 54
  start-page: 1799
  year: 1996
  ident: 2024020600500885700_r15
  publication-title: Phys. Rev. B
  doi: 10.1103/PhysRevB.54.1799
– volume: 12
  start-page: 1515
  year: 1997
  ident: 2024020600500885700_r2
  publication-title: Semicond. Sci. Technol.
  doi: 10.1088/0268-1242/12/12/001
– volume: 13
  start-page: 692
  year: 1998
  ident: 2024020600500885700_r10a
  publication-title: Semicond. Sci. Technol.
  doi: 10.1088/0268-1242/13/7/006
– volume: 70
  start-page: 2144
  year: 1997
  ident: 2024020600500885700_r8
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.119259
– volume: 13
  start-page: 680
  year: 1998
  ident: 2024020600500885700_r10
  publication-title: Semicond. Sci. Technol.
  doi: 10.1088/0268-1242/13/7/005
– volume: 58
  start-page: 2117
  year: 1991
  ident: 2024020600500885700_r4
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.104978
– ident: 2024020600500885700_r17
– volume: 6
  start-page: 1665
  year: 1965
  ident: 2024020600500885700_r12
  publication-title: Sov. Phys. Solid State
– volume: QE-22
  start-page: 1696
  year: 1986
  ident: 2024020600500885700_r1
  publication-title: IEEE J. Quantum Electron.
– volume: 82
  start-page: 3911
  year: 1997
  ident: 2024020600500885700_r9
  publication-title: J. Appl. Phys.
  doi: 10.1063/1.365696
– volume: 7
  start-page: 260
  year: 1992
  ident: 2024020600500885700_r3
  publication-title: Semicond. Sci. Technol.
  doi: 10.1088/0268-1242/7/2/014
– volume: 47
  start-page: 3690
  year: 1993
  ident: 2024020600500885700_r11
  publication-title: Phys. Rev. B
  doi: 10.1103/PhysRevB.47.3690
– volume: 20
  start-page: 937
  year: 1965
  ident: 2024020600500885700_r13
  publication-title: J. Phys. Soc. Jpn.
  doi: 10.1143/JPSJ.20.937
– volume: 9
  start-page: 772
  year: 1994
  ident: 2024020600500885700_r7
  publication-title: Semicond. Sci. Technol.
  doi: 10.1088/0268-1242/9/5S/101
– volume: 77
  start-page: 959
  year: 1998
  ident: 2024020600500885700_r16
  publication-title: Philos. Mag. B
  doi: 10.1080/13642819808206397
– volume: 63
  start-page: 186
  year: 1993
  ident: 2024020600500885700_r6
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.110394
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