Effects of boron doping on the surface modification and defect evolution of silicon induced by proton implantation and annealing

• Published in: Applied surface science Vol. 667; p. 160332
• Main Authors: Chen, Zeyuan, Cui, Minghuan, Li, Jing, Jin, Peng, Lan, Yiqihui, Ren, Xuexin, Yang, Yushan, Li, Dongsheng, Shen, Tielong, Wang, Zhiguang
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 15.09.2024
• Subjects: Boron doping; Monocrystalline silicon; Proton beam implantation; Raman; TEM; Raman; Proton beam implantation; Monocrystalline silicon; TEM; Boron doping

[Display omitted] •Boron doping affects the surface morphology and roughness of the exfoliated silicon samples.•Boron doping affects the aggregation of damage, the width of the damage band, the size and density of stick cavities under the same implantation and annealing parameters.•The surface modif...