Concentration of Fluorine Atoms and Kinetics of Reactive-Ion Etching of Silicon in CF4 + O2, CHF3 + O2, and C4F8 + O2 Mixtures

• Published in: Russian microelectronics Vol. 52; no. 4; pp. 267 - 275
• Main Authors: Efremov, A. M., Bobylev, A. V., Kwon, K.-H.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 01.08.2023; Springer Nature B.V
• Subjects: Chemical reactions; Comparative studies; Electrical Engineering; Engineering; Etching; Fluorine; Kinetics; Mixtures; Oxidation; Oxygen atoms; Plasma diagnostics; Polymer films; Reactive ion etching; Silicon; fluorocarbon gases; polymerization; fluorine atoms; etching; plasma; kinetics; mechanism

A comparative study of the electrophysical parameters of the plasma, the fluorine atom concentrations, and the kinetics of reactive-ion etching of silicon in CF 4 + O 2 , CHF 3 + O 2 , and C 4 F 8 + O 2 mixtures of a variable (0–75% O 2 ) initial composition is carried out. It is shown that the domi...